H5ANAG6NCR-VKC vs H5ANAG6NCR-PBC 对比

详细并排对比 H5ANAG6NCR-VKC 出自 SK hynix 和 H5ANAG6NCR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG6NCR-VKC H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5ANAG6NCR-VKC ✓ 量产中
SK hynix
H5ANAG6NCR-PBC H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC ✓ 量产中

规格对比

参数 H5ANAG6NCR-VKC H5ANAG6NCR-PBC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $70.20
存储器类型 DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gbit —
存储组织 2G x 8 x16 (1G x 16)
接口 DDR4 (Double Data Rate 4) —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
数据速率 [DATA_NEEDED: verified speed grade in Mbps] —
封装 96-ball FBGA FBGA-96
安装类型 Surface Mount Surface Mount
Banks 16 banks (4 bank groups x 4) —
Burst Length BL8 —
Refresh Mode 1x / 2x / 4X per JEDEC DDR4 —
工作温度 [DATA_NEEDED: temperature suffix range confirmation] 0C to 85C
Technology CMOS —
Application Main memory (PC / server / embedded) —
RoHS 状态 [DATA_NEEDED: RoHS compliance statement] Compliant
Density — 16Gb (2GB)
电源电压 — 1.14 V to 1.26 V (nominal 1.2 V)
Transfer Rate — 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps])
Number of Terminals — 96 balls
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask — Yes
Dynamic ODT — Yes
ZQ Calibration — Yes
CRC Function — Yes
Write Leveling — Yes
Maximum Standby Current — [DATA_NEEDED: maximum standby current for PBC speed grade]
CAS 延迟 — [DATA_NEEDED: CAS latency for PBC speed grade]

数据手册与资源

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