H5ANAG8NBJR-PBC vs H5ANAG8NBJR-VKC 对比

详细并排对比 H5ANAG8NBJR-PBC 出自 SK hynix 和 H5ANAG8NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NBJR-PBC H5ANAG8NBJR-PBC - 16Gb DDR4 SDRAM x8, FBGA-78 | SK Hynix

H5ANAG8NBJR-PBC - 16Gb DDR4 SDRAM x8, FBGA-78 | SK Hynix

H5ANAG8NBJR-PBC ✓ 量产中
SK hynix
H5ANAG8NBJR-VKC H5ANAG8NBJR-VKC - 16Gb DDR4-2666 SDRAM x8 FBGA-78 | SK Hynix

H5ANAG8NBJR-VKC - 16Gb DDR4-2666 SDRAM x8 FBGA-78 | SK Hynix

H5ANAG8NBJR-VKC ✓ 量产中

规格对比

参数 H5ANAG8NBJR-PBC H5ANAG8NBJR-VKC
品牌 SK hynix SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $31.50 $8.60
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (2 GB) 16 Gbit
存储组织 x8 2G x 8
Supply Voltage (VDD) 1.2 V —
Speed Grade / Data Rate PBC suffix, DDR4-2666 class —
封装 FBGA-78 (7.5 mm x 11 mm) FBGA-78
安装类型 Surface Mount Surface Mount
Bank Architecture 16 banks in 4 bank groups (DDR4 standard) —
Prefetch 8n —
接口类型 Parallel, SSTL12 —
工作温度 [DATA_NEEDED: operating temperature range] 0C to +85C
CAS Latency (typical bin) [DATA_NEEDED: CAS latency] —
Refresh Self refresh, 1x/2x/4x refresh modes —
Die Revision BJR —
RoHS 状态 Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) Compliant, Lead-Free and Halogen-Free
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Standard Package Quantity [DATA_NEEDED: standard quantity] —
Speed Grade — DDR4-2666 (2666 Mbps/pin)
电源电压 — 1.14 V to 1.26 V (VDDQ)
Clock Frequency — 1.6 GHz (internal interface per distributor data)
Standby Current — 30 mA (operating, per distributor listing)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Refresh Interval — [DATA_NEEDED: tREFI refresh interval]

数据手册与资源

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