H5ANAG8NBJR-RDC vs H5ANAG6NBJR-VKC 对比
详细并排对比 H5ANAG8NBJR-RDC 出自 SK hynix 和 H5ANAG6NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-RDC | H5ANAG6NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $15.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| 存储组织 | 2G x 8 | [DATA_NEEDED: x16 organization per datasheet] |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 接口 | SSTL12 | DDR4, SSTL-12 |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| 封装 | 78-ball FBGA | FBGA-96 (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | — |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | -40C to +95C (family grade reference) |
| RoHS 状态 | Compliant (lead-free PBGA per family product data) | [DATA_NEEDED: RoHS status] |
| 生命周期状态 | Active | — |
| Manufacturer | — | SK Hynix |
| Part Number | — | H5ANAG6NBJR-VKC |
| Memory Density | — | 16Gb (2GB) |
| 数据速率 | — | 2666 Mbps (per family reference, VKC speed code) |
| 电源电压 | — | 1.2 V (DDR4 standard) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |