H5ANAG8NBJR-RDC vs H5ANAG8NCR-RDC 对比

详细并排对比 H5ANAG8NBJR-RDC 出自 SK hynix 和 H5ANAG8NCR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ 量产中
SK hynix
H5ANAG8NCR-RDC H5ANAG8NCR-RDC - DDR4 SDRAM 16Gb 2Gx8 1.2V | SK hynix

H5ANAG8NCR-RDC - DDR4 SDRAM 16Gb 2Gx8 1.2V | SK hynix

H5ANAG8NCR-RDC ✓ 量产中

规格对比

参数 H5ANAG8NBJR-RDC H5ANAG8NCR-RDC
品牌 SK hynix SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $1.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit 16 Gbit
存储组织 2G x 8 2G x 8
Supply Voltage (VDD) 1.2 V 1.2 V
I/O Voltage (VDDQ) 1.2 V —
接口 SSTL12 DDR4 (fully synchronous, both clock edges)
Speed Grade (suffix R) DDR4-2666 class —
封装 78-ball FBGA 78-ball FBGA
安装类型 Surface Mount Surface Mount
Refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet) [DATA_NEEDED: refresh specification]
Bank Groups 4 (per 16Gb DDR4 family datasheet) [DATA_NEEDED: bank/bank group count]
Data Strobe DQS with read/write training —
Data Bus Inversion Supported (DBI) —
CAS 延迟 [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CAS latency]
工作温度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
RoHS 状态 Compliant (lead-free PBGA per family product data) [DATA_NEEDED: RoHS status]
生命周期状态 Active —
Family — H5ANAG8N 16Gb DDR4
Application Segment — Main memory (server, networking, industrial, embedded)
Max Data Rate — [DATA_NEEDED: speed bin data rate in MT/s]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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