H5ANAG8NBJR-VKC vs K4AAG085WM-BCTD 对比
详细并排对比 H5ANAG8NBJR-VKC 出自 SK hynix 和 K4AAG085WM-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NBJR-VKC | K4AAG085WM-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.60 | $9.95 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| 存储组织 | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | DDR4-2666 |
| 电源电压 | 1.14 V to 1.26 V (VDDQ) | 1.2 V |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| 工作温度 | 0C to +85C | 0C to +85C |
| 封装 | FBGA-78 | FBGA-78 |
| 安装类型 | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 状态 | Compliant, Lead-Free and Halogen-Free | [DATA_NEEDED: RoHS status] |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| 存储容量 | — | 16 Gb |
| 接口类型 | — | Parallel (DDR4) |
| Clock Rate | — | 1333 MHz |
| 数据速率 | — | 2666 MT/s |
| Bank Group Architecture | — | DDR4 bank groups |
| Density Class | — | 16 Gbit monolithic DRAM |
| Application Class | — | Industrial / embedded memory |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |