H5ANAG8NCJR-XNC vs H5ANAG6NCJR-XN 对比
详细并排对比 H5ANAG8NCJR-XNC 出自 SK hynix 和 H5ANAG6NCJR-XN 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG8NCJR-XNC | H5ANAG6NCJR-XN |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $65.63 | $71.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit (1G x 16) |
| 存储组织 | 2G x 8 | 1G x 16 |
| 数据速率 | 3200 MT/s (DDR4-3200) | 3200 Mbps/pin (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| 封装 | FBGA-78 (7.5 x 11 mm) | FBGA-96 (96-ball) |
| 工作温度 | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Process Node | 1z nm (non-EUV) | — |
| Die Bit Density | 0.296 Gb/mm2 | — |
| Peak Bandwidth (per 64-bit channel) | 25.6 GB/s at DDR4-3200 | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| RoHS 状态 | Compliant | Compliant |
| Base Part Number Family | H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) | — |
| Speed Grade Suffix | -XNC (0~95C commercial) | — |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for -XN speed grade] |