H5ANAG8NCJR-XNC vs H5ANAG8NCR-VKC 对比

详细并排对比 H5ANAG8NCJR-XNC 出自 SK hynix 和 H5ANAG8NCR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NCJR-XNC H5ANAG8NCJR-XNC - 16Gb DDR4-3200 SDRAM 2Gx8 | SK Hynix

H5ANAG8NCJR-XNC - 16Gb DDR4-3200 SDRAM 2Gx8 | SK Hynix

H5ANAG8NCJR-XNC ✓ 量产中
SK hynix
H5ANAG8NCR-VKC H5ANAG8NCR-VKC - 16Gb DDR4 SDRAM 1.2V FBGA | SK hynix

H5ANAG8NCR-VKC - 16Gb DDR4 SDRAM 1.2V FBGA | SK hynix

H5ANAG8NCR-VKC ✓ 量产中

规格对比

参数 H5ANAG8NCJR-XNC H5ANAG8NCR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $65.63 $28.13
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
存储组织 2G x 8 —
数据速率 3200 MT/s (DDR4-3200) —
Supply Voltage (VDD) 1.2 V —
封装 FBGA-78 (7.5 x 11 mm) FBGA-78
工作温度 0C to +95C 0C to +85C
安装类型 Surface Mount Surface Mount
Process Node 1z nm (non-EUV) —
Die Bit Density 0.296 Gb/mm2 —
Peak Bandwidth (per 64-bit channel) 25.6 GB/s at DDR4-3200 —
CAS Latency (CL) [DATA_NEEDED: CAS Latency] —
Refresh [DATA_NEEDED: refresh specification] —
RoHS 状态 Compliant Compliant
Base Part Number Family H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM) —
Speed Grade Suffix -XNC (0~95C commercial) —
Memory Organization — [DATA_NEEDED: organization (e.g. 2G x8)]
存储容量 — 16 Gbit
Supply Voltage Range — 1.14 V to 1.26 V
Nominal Supply Voltage — 1.2 V
Max Data Rate — [DATA_NEEDED: Mbps per pin for VKC grade]
Self Refresh — Auto self-refresh
Data Mask Function — Yes
On-Chip Termination — Dynamic ODT
Reset Function — Asynchronous reset
ZQ Calibration — Yes
Write Leveling — Yes
CRC / CA Parity — Yes
Auto Precharge — Yes
Standby Current — [DATA_NEEDED: IDD current spec]

数据手册与资源

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