H5ANAG8NCR-VKC - 16Gb DDR4 SDRAM 1.2V FBGA | SK hynix
料号： H5ANAG8NCR-VKC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $35.16 | $35.16 |
| 10 | $33.4 | $334.00 |
| 100 | $31.64 | $3,164.00 |
| 500 | $29.89 | $14,945.00 |
| 1,000 | $28.13 | $28,130.00 |
H5ANAG8NCR-VKC 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory IC that stores data in capacitor-based cells arranged in banks and rows, refreshed dynamically hundreds of times per second. Within the memory hierarchy, DDR4 DRAM sits between CPU caches and mass storage, serving as the main system memory in servers, workstations, and embedded computing platforms. It is standardized under the JEDEC DDR4 specification family (JESD79-4).
Key features of the H5ANAG8NCR-VKC family include auto self-refresh and self-refresh temperature management across the 0C to +85C operating range, data mask (DM) function, dynamic on-chip termination (ODT), asynchronous reset for simplified power-up control, ZQ calibration for output impedance matching, write leveling for fly-by topology signal integrity, CRC and CA parity protection for command/address integrity, and auto precharge for efficient row management.
Architecturally, the device uses a synchronous DRAM core clocked by an external controller with a bidirectional data strobe (DQS) aligned to data on both clock edges. Internal bank grouping (4 groups) enables interleaved access to raise effective bandwidth, while on-die termination and dynamic ODT reduce reflection noise on high-speed point-to-point buses. The VKC speed grade supports a maximum data rate of up to 2666 Mbps per pin in the family roadmap, with CAS latency programmed via the mode register set (MRS).
Typical applications include server DIMM and RDIMM subsystems, industrial control main memory, networking equipment line-card buffers, and embedded computing modules where density and bandwidth must be balanced against the lower power of the 1.2V DDR4 rail versus legacy DDR3.
A critical design consideration is signal integrity: 2666-class DDR4 requires fly-by routing with per-byte write leveling, length-matched stubs, and correct VTT termination supplied by a dedicated termination regulator; power-up sequencing must satisfy the asynchronous reset timing before any MRS command.
This page synthesizes distributor pricing, same-family drop-in speed/temperature-grade alternatives, and practical DDR4 design notes not found in the manufacturer datasheet, verified as of 2026-09-05.
直接替换替代料： H5ANAG8NCR-VKC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5ANAG8NCR-VKC （相同外形与封装尺寸） ——差异在于 Package, Data Rate, RoHS Status, Interface, Mounting Type.
快速对比工具——选择替代料号进行并排对比：
H5ANAG8NCMR-VKC
✅ 直接替换✓ 有现货
$8.05 / 个
查看数据手册 →H5ANAG8NCR-UHC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$3.05 / 个
查看数据手册 →H5ANAG8NCR-RDC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1 / 个
查看数据手册 →H5ANAG8NCR-PBC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$9.5 / 个
查看数据手册 →H5ANAG8NCJR-XNC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$65.625 / 个
查看数据手册 →H5ANAG8NAMR-UHC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$2.15 / 个
查看数据手册 →H5ANAG8NCR-VKC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 16 Gbit |
| Supply Voltage Range | 1.14 V to 1.26 V |
| Nominal Supply Voltage | 1.2 V |
| 工作温度 | 0C to +85C |
| 封装 | FBGA-78 |
| 安装类型 | Surface Mount |
| Self Refresh | Auto self-refresh |
| Data Mask Function | Yes |
| On-Chip Termination | Dynamic ODT |
| Reset Function | Asynchronous reset |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC / CA Parity | Yes |
| Auto Precharge | Yes |
| RoHS 状态 | Compliant |
H5ANAG8NCR-VKC fbga-78 引脚配置指南
H5ANAG8NCR-VKC（fbga-78 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5ANAG8NCR-VKC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5ANAG8NCR-VKC 适用于 6 应用s: Server DIMM Subsystems, Industrial Control Main Memory, Networking Line Cards, Embedded Computing Modules, Test and Measurement Instruments, Automotive-Adjacent and Rugged Compute.
Server DIMM Subsystems
The H5ANAG8NCR-VKC fits registered DIMM and small-outline RDIMM designs where 16Gb density per component maximizes capacity per module. Its 1.2V rail cuts per-bit power roughly 20% versus DDR3, and family CRC plus CA parity protects command/address integrity on heavily loaded server buses, per SK hynix feature listings. Write leveling supports the fly-by clock topology required on registered modules, while dynamic ODT maintains eye margins at 2666-class data rates across up to 18 stacked components per RDIMM. Thermal design must account for stacked configurations, where mid-bank components see 85C limits approached; auto self-refresh temperature compensation (SRT) adjusts refresh rate internally to preserve retention without controller intervention.
推荐
Industrial Control Main Memory
In PLCs, industrial PCs, and motion controllers, the H5ANAG8NCR-VKC provides dense main memory on the 1.14V-1.26V DDR4 rail. The 0C to +85C operating range suits fanless enclosures, and auto self-refresh with asynchronous reset simplifies power-fail recovery sequencing in systems that must resume quickly after brownout. The FBGA-78 package's low profile (about 1.2mm) fits conduction-cooled designs, and dynamic ODT relaxes trace-length matching on four-layer industrial boards. Designers should derate the 85C ceiling against enclosure ambient and pair the DRAM with a PMIC providing tracked VTT to keep termination noise within margin during inverter-driven EMI events common on factory floors.
推荐
Networking Line Cards
Switch, router, and 5G transport line cards use the H5ANAG8NCR-VKC as packet-buffer and table memory. The family's 2666-class speed grade and four-bank-group architecture sustain the low-latency, high-random-access profile that queue management demands, while CA parity guards against command corruption from high fan-out backplanes. A 16Gb device reduces component count versus 8Gb parts (such as H5AN8G8NCJR-VKC), shrinking buffer-subsystem area on crowded cards. CRC-enabled links tolerate the noisy environment near gigabit SerDes; nevertheless, keep DRAM fly-by stubs away from switch ASIC power islands and verify eye diagrams at the full data rate with the production stack-up before release.
推荐
Embedded Computing Modules
COM Express and SMARC modules embed the H5ANAG8NCR-VKC down on the carrier-side memory array to deliver 8-16GB capacities in compact footprints. The 1.2V rail integrates cleanly with module PMICs, and ZQ calibration plus on-die termination let four-layer substrates meet 2666-class timing when routed with length-matched fly-by stubs. Write leveling automates the DQS-DQ alignment the controller needs, reducing firmware bring-up effort. For extended-temperature module variants, qualify the UHC or RDC suffix grades listed on this page. Startup code must sequence asynchronous reset before MRS writes; most x86 and Arm embedded SoC memory reference codes for DDR4 handle this automatically.
推荐
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and arbitrary waveform generators stream acquisition data into DDR4 buffers, and the H5ANAG8NCR-VKC's 16Gb density extends record length per memory channel. Its CRC and write-leveling features maintain integrity at 2666-class rates in instruments where multiple memory controllers run concurrently on shared clock trees. The 78-ball FBGA suits dense mezzanine boards, and the 0C to +85C range covers typical benchtop thermal envelopes. Design attention should focus on burst-bandwidth guaranteeing: interleave two devices on independent 32-bit channels to exceed 5GB/s sustained capture throughput, and add thermal spreading copper under the packages to limit die temperature during long, continuous acquisitions.
推荐
Automotive-Adjacent and Rugged Compute
Though commodity DDR4 is not AEC-Q100 qualified, the H5ANAG8NCR-VKC serves non-safety rugged compute nodes such as telematics gateways, off-highway displays, and edge AI inference boxes operating within 0C to +85C. The 1.2V rail reduces thermal load in sealed enclosures, and auto self-refresh with temperature-compensated refresh rate preserves data across wide ambient swings. Conformal-coated assemblies benefit from the FBGA's solder-maskable ball field. For cold-crank environments below 0C, select an extended-grade suffix (UHC/RDC) from this page instead, and validate power-up reset timing against battery-sag transients with a scope capture of the 1.14V minimum rail during engine start.
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推荐产品汇总
工程参考数据： H5ANAG8NCR-VKC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5ANAG8NCMR-VKC | H5ANAG8NCR-UHC | H5ANAG8NCJR-XNC |
|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| Speed Grade | VKC (2666-class bin) | CMR die revision bin | UHC bin | XNC bin |
| CRC / CA Parity | Yes | Yes | Yes | Yes |
| Dynamic ODT / Write Leveling | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
关键差异点
- 16Gb density per component （对比 H5AN8G8NCJR-VKC)
- CRC and CA parity on the command/address bus （对比 H5ANAG8NCR-UHC)
- 1.2V operation with dynamic ODT and write leveling （对比 MT40A2G8AG-062E)
设计说明
Route DDR4 address/command lines in fly-by topology with per-byte write leveling enabled; the H5ANAG8NCR family provides the write-leveling feature specifically for this purpose. Keep DQ/DQS stubs under 5mm mismatch within each byte lane and reference them to a solid ground plane. At 2666-class data rates, enable dynamic ODT during writes to absorb reflections from other loads on the bus. Validate eye diagrams on the production stack-up, not the bring-up board, since plane splits near the DRAM array can close the DQ eye by 20-30%.
Supply 1.2V VDD within 1.14V-1.26V using a DDR PMIC with 1-2% accuracy, and generate VTT with a dedicated termination regulator capable of sinking and sourcing the full dynamic ODT current of all components. DDR4 also requires a 2.5V VPP rail for the cell-charge pump; keep it sequenced with VDD per the manufacturer power-up specification. Place 10uF bulk plus at least four 0.1uF ceramic capacitors per component, and plane VTT locally under the termination resistors to control mid-frequency impedance.
Do not issue MRS commands before the asynchronous reset has been asserted and released per the DDR4 power-ramp sequence - doing so is the most common cause of untrained or dead DRAM in first-article builds. Ensure ZQ calibration is executed after reset and re-run on significant temperature drift. When substituting speed grades (VKC to UHC/RDC/PBC), update controller timing registers and boot-time training parameters; a controller programmed only for the VKC bin may fail training on a slower or faster grade even though the footprint is identical.
合规信息
RoHS compliance stated in JLCPCB listing for the H5ANAG8NCR family. REACH, halogen-free, and conflict-minerals declarations not found in verified data.