H5ANAG8NCMR-VKI vs MT40A2G8AG-062E 对比

详细并排对比 H5ANAG8NCMR-VKI 出自 SK hynix 和 MT40A2G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NCMR-VKI H5ANAG8NCMR-VKI - 16Gb DDR4 SDRAM 2666Mbps x8 | SK Hynix

H5ANAG8NCMR-VKI - 16Gb DDR4 SDRAM 2666Mbps x8 | SK Hynix

H5ANAG8NCMR-VKI ✓ 量产中
Micron Technology
MT40A2G8AG-062E MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E ✓ 量产中

规格对比

参数 H5ANAG8NCMR-VKI MT40A2G8AG-062E
品牌 SK hynix Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $9.75
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 16 Gb —
Memory Organization x8 —
数据速率 2666 Mbps per pin —
Technology CMOS, volatile DRAM —
Supply Voltage (VDD) [DATA_NEEDED: VDD] —
Package Type [DATA_NEEDED: package] —
工作温度 [DATA_NEEDED: operating temperature] —
CAS Latency (CL) [DATA_NEEDED: CAS latency] —
Refresh (tREFI) [DATA_NEEDED: refresh interval] —
Bank Groups [DATA_NEEDED: bank group count] —
安装类型 Surface Mount (BGA) Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Product Status Active —
Clocking Differential clock (CK / CK#), fully synchronous —
On-Die Termination Yes (ODT) —
Density — 16 Gbit
存储组织 — 2G x 8
Speed — DDR4-3200 (3200 MT/s)
Clock Frequency — 1600 MHz
Access Time (Clock Cycle Time) — 0.625 ns (tCK)
CAS 延迟 — CL22 (DDR4-3200)
Access Time — 19 ns
Supply Voltage VDD — 1.2 V
I/O Interface — POD12 (1.2 V pseudo-open drain)
VPP Voltage — 2.5 V
Number of Banks — 16 (4 bank groups x 4 banks)
Operating Temperature (AUT grade) — -40C to +95C (per Micron grade table)
封装 — 78-FBGA (7.5 x 11 mm)
Die Revision — AG (current generation)

数据手册与资源

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