H5ANAG8NCR-UHC vs H5ANAG8NCJR-XNC 对比

详细并排对比 H5ANAG8NCR-UHC 出自 SK hynix 和 H5ANAG8NCJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NCJR-XNC H5ANAG8NCJR-XNC - 16Gb DDR4-3200 SDRAM 2Gx8 | SK Hynix

H5ANAG8NCJR-XNC - 16Gb DDR4-3200 SDRAM 2Gx8 | SK Hynix

H5ANAG8NCJR-XNC ✓ 量产中

规格对比

参数 H5ANAG8NCR-UHC H5ANAG8NCJR-XNC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.05 $65.63
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gb 16 Gbit
存储组织 2G x 8 2G x 8
接口 DDR4 (JEDEC-compatible) —
Speed Grade UHC —
封装 FBGA-78 FBGA-78 (7.5 x 11 mm)
安装类型 Surface Mount (BGA) Surface Mount
RoHS Code Yes —
REACH Compliance Compliant —
Part Life Cycle Code Active —
Manufacturer SK hynix Inc. —
数据速率 [DATA_NEEDED: data rate MT/s] 3200 MT/s (DDR4-3200)
CAS 延迟 [DATA_NEEDED: CL] —
VDD Supply Voltage [DATA_NEEDED: VDD value] —
VPP Supply Voltage [DATA_NEEDED: VPP value] —
工作温度范围 [DATA_NEEDED: temperature range] —
Bank Groups [DATA_NEEDED: bank group count] —
Supply Voltage (VDD) — 1.2 V
工作温度 — 0C to +95C
Process Node — 1z nm (non-EUV)
Die Bit Density — 0.296 Gb/mm2
Peak Bandwidth (per 64-bit channel) — 25.6 GB/s at DDR4-3200
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Refresh — [DATA_NEEDED: refresh specification]
RoHS 状态 — Compliant
Base Part Number Family — H5ANAG8NCJR (16Gb DDR4 CMOS SDRAM)
Speed Grade Suffix — -XNC (0~95C commercial)

数据手册与资源

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