H5CG46AGBDX017 vs MT53E256M16D1FW-046 对比
详细并排对比 H5CG46AGBDX017 出自 SK hynix 和 MT53E256M16D1FW-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E256M16D1FW-046 - 4Gb LPDDR4X SDRAM 2133MHz | Micron
MT53E256M16D1FW-046 ✓ 量产中规格对比
| 参数 | H5CG46AGBDX017 | MT53E256M16D1FW-046 |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $92.10 | $7.20 |
| 存储器类型 | DDR5 SDRAM | SDRAM - Mobile LPDDR4X |
| Density | 16 Gb | 4 Gbit |
| 存储组织 | 1G x 16 | 256M x 16 |
| 数据速率 | 5600 Mbps/pin | 2133 Mbps/pin (2.133 GHz) |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD nominal, expected 1.1 V per DDR5 JEDEC class] | — |
| 封装 | FBGA (surface mount) | 200-TFBGA (10 x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount (BGA soldered) |
| 接口 | DDR5 (Double Data Rate 5) | Parallel |
| On-Die ECC | [DATA_NEEDED: on-die ECC support confirmation] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Ball Count | [DATA_NEEDED: package ball count] | 200 |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status from datasheet] |
| Generation | DDR5 | — |
| Manufacturer Part Status | In stock at multiple distributors | — |
| Typical Applications | Data storage, firmware boot, embedded logging, industrial controllers, computing modules | — |
| Clock Cycle Time | — | 3.5 ns |
| Core Supply Voltage (VDD) | — | 1.1 V |
| I/O Supply Voltage (VDDQ) | — | 0.6 V (LPDDR4X) |
| Technology | — | LPDDR4X LPDRAM |
| Speed Grade | — | -046 (2133 MHz class) |
| Temperature Grade (WT suffix) | — | [DATA_NEEDED: operating temperature range for WT grade] |
| Package Dimensions | — | 10 mm x 14.5 mm |
| Low Power Modes | — | Self-refresh, deep power-down, DPD |