H5CG46AGBDX017 - 16Gb DDR5 5600Mbps SDRAM | SK hynix
料号： H5CG46AGBDX017 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $112.62 | $112.62 |
| 10 | $107.5 | $1,075.00 |
| 100 | $101.4 | $10,140.00 |
| 500 | $96.3 | $48,150.00 |
| 1,000 | $92.1 | $92,100.00 |
H5CG46AGBDX017 概述
A DRAM (Dynamic Random Access Memory) is a type of volatile semiconductor memory that stores each bit in a separate capacitor within an integrated circuit, requiring periodic refresh to retain data. Within the memory hierarchy, DRAM sits between CPU caches (SRAM) and non-volatile storage (NAND flash), and DDR5 is the fifth generation of Double Data Rate synchronous DRAM, succeeding DDR4 with higher bandwidth, lower operating voltage, and integrated power management.
Key features of the H5CG46AGBDX017 include its 5600 Mbps/pin transfer rate (PC5-44800 class bandwidth), 16Gb density in a single-die configuration, and the DDR5 architecture innovations such as on-die ECC and Decision Feedback Equalization (DFE) that improve signal integrity at high data rates. Compared to DDR4, DDR5 halves the command/address bus burden per channel by splitting the burst length into two independent channels per device, improving effective bandwidth utilization in multi-core systems.
Technically, the device is organized as 1G x 16 and supports the DDR5 protocol with bank group architectures, same-bank refresh, and read/write burst capabilities defined by the JEDEC DDR5 standard family. SK hynix manufactures this device on an advanced DRAM process node to balance speed, power, and bit density.
Typical applications include client computing modules, industrial controllers, embedded logging systems, firmware boot memory pools, and replacement sourcing for DDR5-based platforms, where 16Gb-per-device density enables compact module designs.
Design consideration: verify that the host memory controller supports DDR5-5600 speed grade binning and termination schemes before layout, as DDR5 requires careful trace-length matching and reference voltage management.
This page synthesizes distributor inventory signals, drop-in alternative candidates, and procurement guidance not found in the manufacturer datasheet.
直接替换替代料： H5CG46AGBDX017 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5CG46AGBDX017 （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Interface, Density, Organization.
快速对比工具——选择替代料号进行并排对比：
H5CG46AGBDX017N
✅ 直接替换✓ 有现货
$91.73 / 个
查看数据手册 →H5CG48AGBDX018N
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$87.42 / 个
查看数据手册 →H5CG48AGBDX014N
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$70 / 个
查看数据手册 →H5CG48AGBDX018
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$63.9844 / 个
查看数据手册 →H5CG48AGBDX014
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$86 / 个
查看数据手册 →MT53E256M16D1FW-046
✅ 直接替换✓ 有现货
$7.2 / 个
查看数据手册 →MT62F1536M32D4DS-023
✅ 直接替换✓ 有现货
$27.9 / 个
查看数据手册 →H5CG46AGBDX017 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| Density | 16 Gb |
| 存储组织 | 1G x 16 |
| 数据速率 | 5600 Mbps/pin |
| 封装 | FBGA (surface mount) |
| 安装类型 | Surface Mount |
| 接口 | DDR5 (Double Data Rate 5) |
| RoHS 状态 | Compliant (per JLCPCB listing) |
| Generation | DDR5 |
| Manufacturer Part Status | In stock at multiple distributors |
| Typical Applications | Data storage, firmware boot, embedded logging, industrial controllers, computing modules |
H5CG46AGBDX017 fbga (surface mount) 引脚配置指南
H5CG46AGBDX017（fbga (surface mount) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5CG46AGBDX017.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5CG46AGBDX017 适用于 6 应用s: Client Computing Modules, Industrial Controllers, Embedded Logging and Data Acquisition, Firmware Boot and Code Shadowing, Networking and Edge Appliances, Replacement Sourcing and BOM Maintenance.
Client Computing Modules
The H5CG46AGBDX017 fits client computing modules such as SODIMM-less onboard memory designs and compact PC motherboards, where its 16Gb density and 5600 Mbps/pin rate deliver mainstream DDR5 bandwidth. With a 1G x 16 organization, eight devices populate a 16 GB module channel pair, and the DDR5-5600 class supports integrated graphics workloads that are bandwidth hungry. On-die ECC features of the DDR5 generation reduce soft-error driven instability, while the 1.1V-class supply lowers platform power versus DDR4 at equivalent bandwidth. Designers should match the memory controller's supported speed bins and follow SK hynix routing guidelines for fly-by command/address topology. Unlike LPDDR solutions, discrete DDR5 allows module-level capacity scaling and field replaceability, which is a key trade-off for serviceable client platforms.
推荐
Industrial Controllers
Industrial controllers benefit from the H5CG46AGBDX017's DDR5-5600 bandwidth for real-time data buffering, motion-control look-ahead tables, and vision-inspection frame buffers. The 16Gb device in 1G x 16 organization allows compact two-chip or four-chip memory subsystems that reduce BOM count versus legacy DDR3/DDR4 arrays. Industrial environments impose long product lifetimes, so designers should secure long-term supply agreements with SK hynix or authorized distributors, as commodity DRAM allocation can shift toward mobile segments. Thermal design matters: DRAM refresh requirements extend at high temperature, so verify datasheet temperature ranges for the exact suffix. The x16 organization also halves device count versus x8 designs, improving mean time between failures at the module level. Pair with proper power sequencing per the DDR5 PMIC architecture.
推荐
Embedded Logging and Data Acquisition
For embedded logging and data acquisition systems, the H5CG46AGBDX017 provides high-rate intermediate buffering between fast sensors and slower non-volatile storage. Its 5600 Mbps/pin rate sustains multi-gigabyte-per-second writes into the DRAM staging area, allowing burst-capture of high-speed ADC streams; the 16Gb capacity holds roughly 2 GB per device, and 1G x 16 organization supports wide, low-chip-count data paths. DDR5's independent sub-channel architecture improves small-packet efficiency versus DDR4, which matters for fragmented logging records. Designers should budget refresh overhead and use read/write turnaround optimization in the memory controller. Since DRAM is volatile, firmware must flush buffered logs to flash on power-fail events using supervisor circuits and hold-up capacitance on the 1.1V-class rail.
推荐
Firmware Boot and Code Shadowing
The H5CG46AGBDX017 serves as code-shadow memory in boot architectures where NOR flash copies execute-in-place code into fast DRAM at startup. DDR5-5600 throughput shortens decompression and copy time versus DDR4-3200, cutting boot latency in systems with large firmware images. A typical flow copies a compressed OS image from QSPI NOR (such as the Micron MT25Q family) into the 16Gb DRAM, then jumps execution from a shadowed region. Designers must configure the memory controller's training sequence at every cold boot, since DDR5 requires write-leveling and read-training per channel; expect several hundred milliseconds of initialization overhead that boot-time budgets must absorb. The 1.1V-class rail simplifies integration with modern low-voltage SoCs and reduces standby leakage in always-on embedded systems.
推荐
Networking and Edge Appliances
Edge networking appliances such as enterprise Wi-Fi access points, SD-WAN gateways, and 5G small-cell aggregation boxes use the H5CG46AGBDX017 for packet buffering and flow tables. The DDR5-5600 rate supplies the buffer bandwidth that multi-gigabit line rates demand: a single 16Gb device sustains over 11 GB/s theoretical bandwidth, enough for several 10 GbE flows with deep packet inspection headroom. The x16 organization reduces device count and trace complexity on dense control boards, and on-die ECC of the DDR5 generation guards long-running session state against soft errors that would otherwise reset connections. Layout demands matched-length fly-by routing and rigorous power integrity on the 1.1V rail; follow JEDEC DDR5 module design conventions even in point-to-point onboard configurations.
推荐
Replacement Sourcing and BOM Maintenance
The H5CG46AGBDX017 is actively used by procurement teams for replacement sourcing of DDR5 BOM lines facing allocation or end-of-life pressure on other DDR5 suppliers. Multiple distributors report stock (icDirectory 43950 pcs, Wolfchip 33090 pcs as of early September 2026), making it a practical bridge part for production continuity. When qualifying this device as a substitute, engineers should run the standard FFF check: form (FBGA footprint and ball map), fit (package outline and ball pitch), and function (DDR5-5600 1G x 16 parameters, timing tables, and speed bins). Micron's DRAM cross-reference tool and equivalent services support the parametric comparison, but final validation requires board-level memory testing including training margin and temperature soak. Maintain dual-source documentation to satisfy industrial quality audits.
推荐
推荐产品汇总
工程参考数据： H5CG46AGBDX017 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5CG46AGBDX017N | H5CG48AGBDX018N | MT53E256M16D1FW-046 | MT62F1536M32D4DS-023 |
|---|---|---|---|---|---|
| Package | FBGA (surface mount) | FBGA - same | FBGA - same | FBGA - same family | FBGA - same family |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Micron Technology |
| Memory Generation | DDR5 | DDR5 | DDR5 | LPDDR5-class platform | DDR5 |
关键差异点
- Documented DDR5-5600 speed bin （对比 H5CG48AGBDX014N)
- Compact 16Gb-per-device density in x16 organization （对比 MT62F1536M32D4DS-023)
- Broad multi-distributor stock availability （对比 MT53E256M16D1FW-046)
- Same-die N-suffix continuity （对比 H5CG46AGBDX017N)
设计说明
DDR5-5600 operation requires disciplined fly-by routing of the command/address bus and tightly length-matched data groups. Keep DQ/DQS trace skew within the datasheet timing budget, use ODT (on-die termination) settings per SK hynix recommendations for the 5600 speed bin, and run the controller's read/write training at every boot since DDR5 does not tolerate fixed timing tables across process and temperature corners. Verify eye margins with a scope or an IBIS-AMI simulation before releasing the layout.
DDR5 moves voltage regulation into a PMIC on the module or board rather than relying on the platform VDD rail. Provide a dedicated 1.1V-class VDD/VDDQ rail with adequate decoupling at each DRAM ball group, and follow the DDR5 power-on sequencing requirements for VDD before CS commands. Estimate dynamic current from the datasheet IDD tables at 5600 Mbps under your access pattern (IDD4R/IDD4W); never assume DDR4 current figures, as DDR5 burst and turnaround behavior differ materially.
Design the FBGA land pattern strictly from the SK hynix package mechanical drawing: verify ball count, ball diameter, and the A1 ball orientation marker before generating the footprint. Use via-in-pad or dogbone fanout per ball pitch, and dedicate solid ground reference planes beneath the data groups to control impedance. For high-layer-count boards, keep DQ pairs on the same layer end-to-end to avoid stub reflections at 5600 Mbps rates.
Do not confuse the target MPN with its suffixed variant H5CG46AGBDX017N: suffix letters encode die revision, package code, and speed/temperature attributes in SK hynix part numbering. Always cross-check the full ordering code against the datasheet ordering-information table. Also remember that on-die ECC does not cover the DDR5 channel link; systems requiring end-to-end data protection still need side-band or inline ECC in the controller.
合规信息
RoHS compliance indicated by JLCPCB listing ('DDR SDRAM ROHS'). REACH, lead-free, halogen-free, and conflict-minerals statuses should be confirmed via SK hynix environmental declarations.
