H5TC4G63AFR-PBA vs NDL46PFG-8KIT 对比

详细并排对比 H5TC4G63AFR-PBA 出自 SK hynix 和 NDL46PFG-8KIT 出自 Insignis Technology Corporation。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA ✓ 量产中
Insignis Technology Corporation
NDL46PFG-8KIT NDL46PFG-8KIT - 4Gb DDR3L SDRAM 256Mx16 | Insignis

NDL46PFG-8KIT - 4Gb DDR3L SDRAM 256Mx16 | Insignis

NDL46PFG-8KIT ✓ 量产中

规格对比

参数 H5TC4G63AFR-PBA NDL46PFG-8KIT
品牌 SK hynix Insignis Technology Corporation
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.98 $6.60
存储器类型 DDR3L SDRAM SDRAM - DDR3L
Density 4Gb —
存储组织 256M x 16 —
Supply Voltage (VDD/VDDQ) 1.35V —
数据速率 1866 Mbps (PC3L-14900) 1600 Mbps
封装 96-ball FBGA 96-FBGA (7.5x13.5 mm)
Ball Pitch 0.8mm —
Number of Banks 8 —
Burst Length 8 and 4 (with burst chop) 8 and 4
CAS Latency (CL) 11, 12, 13 —
工作温度范围 0°C to +95°C (Tcase) —
接口 16-bit I/O Parallel
On-Die Termination (ODT) Yes —
ZQ Calibration Yes —
Write Leveling Yes —
Auto Self-Refresh Yes —
Partial Array Self-Refresh Yes —
RoHS Compliant —
存储容量 — 4Gbit (256M x 16)
数据总线宽度 — 16 bit
Clock Frequency — 800 MHz
CAS 延迟 — 20 ns
电源电压 — 1.35V (1.5V compatible)
工作温度 — 95°C (max)
安装类型 — Surface Mount
Access Time — 20 ns
On-Die Termination — Yes
Refresh Mode — Auto-refresh and self-refresh
RoHS 状态 — Compliant

数据手册与资源

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