H5TC4G63AFR-PBJ vs K4B4G1646D-BCK00 对比
详细并排对比 H5TC4G63AFR-PBJ 出自 SK hynix 和 K4B4G1646D-BCK00 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TC4G63AFR-PBJ | K4B4G1646D-BCK00 |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $5.90 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gb (256M x 16) | — |
| 电源电压 | 1.35 V | 1.35V (1.283V to 1.45V) |
| 封装 | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 数据速率 | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1600 Mbps/pin |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | 11 (at 1600 Mbps) |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4 Gb |
| 存储组织 | — | 256M x 16 |
| Speed Grade | — | DDR3-1600 (800 MHz) |
| I/O Voltage | — | 1.35V |
| 工作温度 | — | 0°C to 95°C (Tcase) |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |