H5TC4G63AFR-PBJ vs K4B4G1646D-BCK00 Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBJ by SK hynix and K4B4G1646D-BCK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63AFR-PBJ
H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
H5TC4G63AFR-PBJ β ActiveSamsung Electronics
K4B4G1646D-BCK00
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 β ActiveSpecification Comparison
| Parameter | H5TC4G63AFR-PBJ | K4B4G1646D-BCK00 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $5.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb (256M x 16) | β |
| Supply Voltage | 1.35 V | 1.35V (1.283V to 1.45V) |
| Package | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Temperature Grade | Industrial (-40Β°C to +95Β°C) | β |
| Refresh Cycles | 8192 | β |
| Package Shape | Rectangular | β |
| Number of Terminals | 96 | β |
| Data Rate | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1600 Mbps/pin |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 11 (at 1600 Mbps) |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | β |
| Auto Self-Refresh | Yes | β |
| Data Mask | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| Write Leveling | Yes | β |
| RoHS Status | [DATA_NEEDED: RoHS Status] | β |
| Density | β | 4 Gb |
| Organization | β | 256M x 16 |
| Speed Grade | β | DDR3-1600 (800 MHz) |
| I/O Voltage | β | 1.35V |
| Operating Temperature | β | 0Β°C to 95Β°C (Tcase) |
| Number of Banks | β | 8 |
| Burst Length | β | 8, 4 (with burst chop) |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |