H5TC4G63CFR-H9J vs H5TC4G63MFR-PBA 对比
详细并排对比 H5TC4G63CFR-H9J 出自 SK hynix 和 H5TC4G63MFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5TC4G63CFR-H9J | H5TC4G63MFR-PBA |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.00 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | 1.35V (+0.100V/-0.067V) |
| Speed Grade | -H9 (1866 Mbps / PC3-14900) | — |
| 封装 | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Temperature Grade | Industrial | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | Yes (Lead-Free & Halogen-Free) |
| Clock Input | Fully differential (CK, CK) | — |
| Data Strobe | Differential (DQS, DQS) | — |
| On-Chip DLL | Yes | — |
| Data Mask (DM) | Yes | — |
| 数据速率 | — | 1866 Mbps (PC3L-14900) |
| Number of Banks | — | 8 |
| Burst Length | — | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |