IAUA210N10S5N024AUMA1 vs ISC015N06NM5ATMA1 对比
详细并排对比 IAUA210N10S5N024AUMA1 出自 Infineon 和 ISC015N06NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ 量产中
规格对比
| 参数 | IAUA210N10S5N024AUMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.65 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Technology | MOSFET (Metal Oxide), N-Channel | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tj | 210 A | — |
| Continuous Drain Current (ID) @ TC=25°C | [DATA_NEEDED: ID at TC=25°C] | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate Charge Qg (typ) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Power Dissipation (PD) @ TC=25°C | 238 W | — |
| 工作温度范围 | -55°C to +175°C (TJ) | -55 C to +175 C |
| 封装 | PG-HSOF-5-4 (7×8 mm² sTOLL) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |