IAUC120N04S6L005ATMA1 vs IAUC120N06S5L032ATMA1 对比
详细并排对比 IAUC120N04S6L005ATMA1 出自 Infineon 和 IAUC120N06S5L032ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ 量产中
规格对比
| 参数 | IAUC120N04S6L005ATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC120N04S6L005ATMA1 | — |
| Technology | OptiMOS 6, N-Channel Trench MOSFET | OptiMOS 5 Trench |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 120 A (Tj) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| Power Dissipation (PD, Tc=25°C) | 187 W | — |
| RDS(on) max at VGS=10 V | 0.55 mΩ at 60 A | — |
| RDS(on) max at VGS=4.5 V | 0.85 mΩ | — |
| Gate-Source Voltage (VGS) | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Total Gate Charge (Qg) | 177 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 11.203 nF at 25 V | — |
| Output Capacitance (Coss) | 2.982 nF | — |
| Reverse Transfer Capacitance (Crss) | 175 pF | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-53 (5x6 mm) | PG-TDSON-8-34 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 状态 | Compliant | Compliant |
| Product Family | — | OptiMOS 5 (60 V) |
| 晶体管类型 | — | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| 工作温度范围 | — | -55 C to +175 C (T_j) |
| AEC-Q101 Qualified | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |