IAUC120N04S6L012ATMA1 vs IAUZN04S7L030ATMA1 对比

详细并排对比 IAUC120N04S6L012ATMA1 出自 Infineon 和 IAUZN04S7L030ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 ✓ 量产中
Infineon
IAUZN04S7L030ATMA1 IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 ✓ 量产中

规格对比

参数 IAUC120N04S6L012ATMA1 IAUZN04S7L030ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.21 $0.36
Manufacturer Infineon Technologies —
Part Family OptiMOS 6 40V —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC 120 A —
Pulsed Drain Current (IDM) 480 A —
On-State Resistance (RDS(on)) at 10V VGS 1.2 mΩ (typ) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at 20V VGS] [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC 115 W —
工作温度范围 -55 °C to +175 °C (junction) —
封装 PG-TDSON-8 (TDSON-8, surface mount with exposed pad) PG-TSDSON-8-44 (S3O8) 3x3 mm²
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 (Automotive OptiMOS)
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant —
Delivery Form Tape & Reel —
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel
RoHS Compliance — Compliant

数据手册与资源

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