IAUC120N04S6L012ATMA1 vs IAUZN04S7L030ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L012ATMA1 by Infineon and IAUZN04S7L030ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 β ActiveInfineon
IAUZN04S7L030ATMA1 - 40V 3.05mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUZN04S7L030ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L012ATMA1 | IAUZN04S7L030ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.36 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 6 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC | 120 A | β |
| Pulsed Drain Current (IDM) | 480 A | β |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΞ© (typ) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC | 115 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TSDSON-8-44 (S3O8) 3x3 mmΒ² |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (Automotive OptiMOS) |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | β |
| Delivery Form | Tape & Reel | β |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 60 A |
| Pulsed Drain Current (IDM, Tj) | β | 100 A |
| On-State Resistance (RDS(on), VGS=10V max) | β | 3.05 mΞ© |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD, Tc=25Β°C) | β | 58 W |
| Operating Junction Temperature (Tj) | β | -55C to +175C |
| Technology Family | β | OptiMOS-7 |
| Channel Type | β | N-Channel |
| RoHS Compliance | β | Compliant |