IAUC50N08S5L096ATMA1 vs IAUC100N08S5N043ATMA1 对比

详细并排对比 IAUC50N08S5L096ATMA1 出自 Infineon 和 IAUC100N08S5N043ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ 量产中
Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 ✓ 量产中

规格对比

参数 IAUC50N08S5L096ATMA1 IAUC100N08S5N043ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $1.72
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
工作温度范围 -55°C to +175°C -55°C to +175°C
封装 PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (SuperSO8)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant —
Lead-Free Yes —
MSL 等级 [DATA_NEEDED: MSL level] —
Part Series — IAUC / OptiMOS 5
晶体管类型 — N-Channel MOSFET (Enhancement Mode)
Maximum Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 100 A (package limited)
Continuous Drain Current (chip-limited) — 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W
Maximum R<sub>DS(on)</sub> — 4.3 mΩ
Maximum Power Dissipation (P<sub>D</sub>) — 125 W (T<sub>C</sub>)
引脚数量 — 8
湿敏等级(MSL) — MSL1 (up to 260°C peak reflow)
Avalanche Rating — 100% Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)
Technology — OptiMOS 5 (Trench)
Channel Mode — Enhancement

数据手册与资源

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