IAUC60N04S6L039ATMA1 vs IAUC120N04S6L005ATMA1 对比
详细并排对比 IAUC60N04S6L039ATMA1 出自 Infineon 和 IAUC120N04S6L005ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ 量产中规格对比
| 参数 | IAUC60N04S6L039ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.72 | $0.92 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench) | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | — |
| Pulsed Drain Current (I_DM) | 240 A | — |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P_D) | 42 W | — |
| 工作结温 | -55C to +175C | -55 °C to +175 °C |
| 封装 | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-53 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUC120N04S6L005ATMA1 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A (Tj) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25°C) | — | 187 W |
| RDS(on) max at VGS=10 V | — | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | — | 0.85 mΩ |
| Gate-Source Voltage (VGS) | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Total Gate Charge (Qg) | — | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 11.203 nF at 25 V |
| Output Capacitance (Coss) | — | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | — | 175 pF |