IAUC60N04S6N031HATMA1 vs IAUC100N04S6L014ATMA1 对比

详细并排对比 IAUC60N04S6N031HATMA1 出自 Infineon 和 IAUC100N04S6L014ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ 量产中
Infineon
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 ✓ 量产中

规格对比

参数 IAUC60N04S6N031HATMA1 IAUC100N04S6L014ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.72
Manufacturer Infineon Technologies Infineon Technologies
Part Family IAUC (Integrated Automotive Half-Bridge) IAUC / OptiMOS 6 40V
Process Technology OptiMOS 6 40V —
Configuration Half-Bridge (2 N-Channel MOSFETs) —
Drain-Source Voltage (V_DS) 40 V 40 V
Continuous Drain Current (I_D, Tj) 60 A —
Power Dissipation (P_D, Tc=25C) 75 W —
R_DS(on) at VGS=10V 3.1 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] [DATA_NEEDED: V_GS max rating]
工作温度范围 -55 °C to +175 °C (Tj) -55C to +175C
封装 PG-TDSON-8-56 (5 mm x 6 mm) PG-TDSON-8 (SuperSO8, 5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1
晶体管类型 — N-Channel MOSFET
Mode — Enhancement
Continuous Drain Current (I_D, Tc) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) max (V_GS=10V) — 1.4 mOhm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G typical]
Power Dissipation (P_D, Tc) — 100 W
AEC-Q101 Qualification — Yes
Technology — OptiMOS 6
Packaging — Tape & Reel (ATMA1 suffix)

数据手册与资源

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