IAUC60N04S6N031HATMA1 vs IAUC120N06S5L011ATMA1 对比

详细并排对比 IAUC60N04S6N031HATMA1 出自 Infineon 和 IAUC120N06S5L011ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ 量产中
Infineon
IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 ✓ 量产中

规格对比

参数 IAUC60N04S6N031HATMA1 IAUC120N06S5L011ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $2.10
Manufacturer Infineon Technologies Infineon Technologies
Part Family IAUC (Integrated Automotive Half-Bridge) —
Process Technology OptiMOS 6 40V —
Configuration Half-Bridge (2 N-Channel MOSFETs) —
Drain-Source Voltage (V_DS) 40 V 60 V
Continuous Drain Current (I_D, Tj) 60 A —
Power Dissipation (P_D, Tc=25C) 75 W —
R_DS(on) at VGS=10V 3.1 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
工作温度范围 -55 °C to +175 °C (Tj) —
封装 PG-TDSON-8-56 (5 mm x 6 mm) PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Product Family — OptiMOS 5 60 V (S5 generation)
Polarity / Channel Type — N-Channel
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) — 310 A (Tj), 120 A marketing
R_DS(on) max — [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) — 188 W at T_C = 25 °C
工作结温 — -55 °C to +175 °C
Avalanche Energy Rated — Yes (EAS)

数据手册与资源

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