IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
料号： IAUC100N04S6L020ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.62 | $16.20 |
| 100 | $1.21 | $121.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.86 | $860.00 |
IAUC100N04S6L020ATMA1 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used in switching power conversion, motor drive, and load management. The IAUC100N04S6L020 belongs to the OptiMOS 6 family, which sits in the discrete-semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor -> semiconductor device. The N-channel variant requires a positive gate-source voltage to conduct and is the dominant choice for low-side switching, high-current synchronous rectification, and OR-ing applications.
Key features of the IAUC100N04S6L020 include a 40 V drain-source breakdown voltage (V<sub>(BR)DSS</sub>) suitable for 12 V and 24 V automotive rails, a maximum R<sub>DS(on)</sub> of 2.04 mΩ at V<sub>GS</sub>=10 V and I<sub>D</sub>=50 A, low gate charge Q<sub>G</sub> for high-frequency switching, and an operating junction temperature range of -55 °C to +175 °C. The leadless SS08 (PG-TDSON-8) package offers a top-side cooling thermal pad that drastically reduces thermal resistance compared with DPAK, allowing 75 W dissipation on a standard JEDEC 1s0p PCB footprint.
The OptiMOS 6 platform improves switching figure-of-merit (R<sub>DS(on)</sub> x Q<sub>g</sub>) over earlier OptiMOS generations, reducing both conduction and switching losses in 40 V automotive systems. The 2 mΩ on-resistance at 100 A means the device dissipates only ~20 W at full rated current, a value that would have required a much larger TO-220 part a decade ago.
Typical applications for this part include 12 V/24 V automotive ECU power switching, electric power steering (EPS) and braking system MOSFETs, BLDC motor drive half-bridges, high-current DC-DC converter synchronous rectifiers, battery management system (BMS) protection switches, and USB-PD / e-fuse load switches. The combination of automotive-grade qualification and SS08 footprint makes it a drop-in upgrade for older OptiMOS 5 designs.
When designing with the IAUC100N04S6L020, ensure the gate drive voltage reaches at least 10 V for full enhancement and use a Kelvin-source connection (pin 4) to avoid R<sub>DS(on)</sub> degradation from source-bond inductance. Keep the source-pad copper pour to at least 100 mm² to achieve the rated 75 W dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and design notes not found on the manufacturer datasheet - including same-brand OptiMOS 6 family variants and cross-brand equivalents that share the PG-TDSON-8 footprint.
直接替换替代料： IAUC100N04S6L020ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUC100N04S6L020ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, MSL Level, Part Family.
快速对比工具——选择替代料号进行并排对比：
IAUC100N04S6L014ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.72 / 个
查看数据手册 →IAUC100N04S6L025ATMA1
✅ 直接替换✓ 有现货
$0.62 / 个
查看数据手册 →IAUC120N04S6L012ATMA1
✅ 直接替换✓ 有现货
$1.21 / 个
查看数据手册 →IAUC60N04S6N044ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.98 / 个
查看数据手册 →BSZ070N08LS5ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.78 / 个
查看数据手册 →IPD70R1K4P7SAUMA1
✅ 直接替换✓ 有现货
$0.52 / 个
查看数据手册 →IAUC100N04S6L020ATMA1 最大额定值与电气特性
| FET Type | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V |
| Continuous Drain Current (Tc) | 100 A |
| Power Dissipation (Tc) | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΩ |
| RDS(on) Typical | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V |
| Technology | OptiMOS 6 |
| 工作温度范围 | -55 °C to +175 °C (TJ) |
| 封装 | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| 安装类型 | Surface Mount |
| Qualification | Automotive grade |
| Packaging | Tape & Reel (TMA1) |
| RoHS 状态 | Compliant |
IAUC100N04S6L020ATMA1 引脚配置
| 引脚 1 | Source — Power source connection (bonded to thermal pad internally on some variants) |
| 引脚 2 | Source — Power source connection |
| 引脚 3 | Source — Power source connection |
| 引脚 4 | Kelvin Source — Kelvin-source connection for gate-drive return, reduces Ls effect on R<sub>DS(on)</sub> |
| 引脚 5 | Gate — Gate input, drive with V<sub>GS</sub>=10 V for full enhancement |
| 引脚 6 | Drain — Power drain connection |
| 引脚 7 | Drain — Power drain connection |
| 引脚 8 | Drain — Power drain connection, bonded to thermal pad on PCB top side |
典型应用
IAUC100N04S6L020ATMA1 适用于 6 应用s: Automotive ECU Power Switching, Electric Power Steering (EPS) and Braking Systems, High-Current DC-DC Synchronous Rectifier, Battery Management System (BMS) Protection Switch, BLDC Motor Drive Half-Bridge, USB-PD and eFuse Load Switch.
Automotive ECU Power Switching
The IAUC100N04S6L020ATMA1's 40 V V<sub>(BR)DSS</sub> and 100 A continuous drain current directly address 12 V and 24 V automotive ECU switching. Its OptiMOS 6 silicon delivers 2.04 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, keeping conduction losses under 20 W at full rated current - small enough to dissipate on the PG-TDSON-8's top-side thermal pad without a heatsink. The AEC-Q101 automotive qualification, -55 to +175 °C junction range and load-dump transient capability make it a robust high-side/low-side switch for body control modules and lighting ECUs, where it is typically driven by a TPS1H100-Q1 or BTS50080-1TEA gate driver from a 5 V logic-level PWM input.
推荐
Electric Power Steering (EPS) and Braking Systems
In EPS and ABS/ESC power blocks the IAUC100N04S6L020ATMA1 forms the high-current half-bridge switches that drive the BLDC motor stator windings. Its 100 A continuous drain current handles peak transient currents seen during parking maneuvers, while the 2 mΩ R<sub>DS(on)</sub> minimizes I²R losses in the high-current path - critical for system efficiency and thermal budget. The PG-TDSON-8 footprint allows top-side cooling via the exposed pad, and the automotive qualification ensures compliance with ISO 26262 functional-safety analysis requirements.
推荐
High-Current DC-DC Synchronous Rectifier
The IAUC100N04S6L020ATMA1 is an excellent synchronous rectifier for 12 V to 1 V/3.3 V buck converters in server, telecom and automotive point-of-load applications. Its 2.04 mΩ R<sub>DS(on)</sub> and low Q<sub>G</sub> of the OptiMOS 6 platform minimize both conduction and switching losses at 200 kHz - 1 MHz switching frequencies, achieving peak efficiencies above 95%. The PG-TDSON-8 package allows direct top-side cooling on a 100 mm² copper pour, and the 40 V V<sub>(BR)DSS</sub> provides adequate margin above 24 V input transients with proper snubbing.
推荐
Battery Management System (BMS) Protection Switch
As a high-side disconnect switch in 12 V and 48 V mild-hybrid BMS systems, the IAUC100N04S6L020ATMA1's 100 A continuous rating and 2 mΩ R<sub>DS(on)</sub> minimize both voltage drop and heat generation during normal operation. The OptiMOS 6 cell provides robust avalanche energy (E<sub>AS</sub>) and short-circuit withstand, critical for handling inrush currents during pre-charge and load-dump transients. The PG-TDSON-8 footprint allows compact PCB layout alongside current-sense shunts, and the automotive qualification meets the reliability demands of battery-pack applications.
推荐
BLDC Motor Drive Half-Bridge
For industrial and automotive BLDC motor drives (HVAC blowers, water pumps, e-bikes), the IAUC100N04S6L020ATMA1 serves as the low-side or high-side switch in a 3-phase inverter topology. Its 100 A continuous and 2 mΩ R<sub>DS(on)</sub> sustain PWM switching at 20-50 kHz while keeping the thermal envelope manageable on a standard 4-layer PCB. The PG-TDSON-8 footprint enables a compact 6-MOSFET inverter on a footprint under 25 mm x 25 mm, and pairing the part with IRS2008STRPBF or IR21271STRPBF gate drivers yields a robust, automotive-grade solution.
推荐
USB-PD and eFuse Load Switch
In USB-PD 3.1 EPR (140 W) and high-current eFuse applications the IAUC100N04S6L020ATMA1 acts as the high-side protection switch in 12 V/24 V systems. Its 2.04 mΩ R<sub>DS(on)</sub> keeps conduction loss under 0.2 W at 10 A continuous load - small enough to avoid thermal shutdown without a heatsink - and the 40 V V<sub>(BR)DSS</sub> withstands load-dump transients on automotive 12 V rails. The device's fast switching speed, controlled by a BTS4141NHUMA1 or BTS70012-1ESP high-side driver, enables sub-millisecond overcurrent and reverse-current protection.
推荐
推荐产品汇总
工程参考数据： IAUC100N04S6L020ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUC100N04S6L014ATMA1 | IAUC100N04S6L025ATMA1 | IAUC120N04S6L012ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (Tc) | 100 A | 100 A | 100 A | 120 A | 60 A |
| RDS(on) max @ VGS=10V | 2.04 mΩ | 1.4 mΩ | 2.5 mΩ | 1.2 mΩ | 4.4 mΩ |
| Technology | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V | OptiMOS 6 40V |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes |
| Power Dissipation (Tc) | 75 W | 75 W (similar) | 75 W (similar) | 100 W | 50 W |
| Price (qty-1, USD) | 1.95 | ~2.40 | ~1.65 | ~2.80 | ~1.10 |
关键差异点
- Lowest R_DS(on) at V_GS=10V in 5x6 mm SS08 package for 40 V class （对比 IAUC100N04S6L025ATMA1)
- 100 A continuous drain current rating （对比 IAUC60N04S6N044ATMA1)
- AEC-Q101 automotive qualification with OptiMOS 6 robustness （对比 IAUC120N04S6L012ATMA1)
- Kelvin-source pin (pin 4) for cleaner gate drive （对比 IPD70R1K4P7SAUMA1 (different voltage class))
设计说明
Estimated: at I_D=100A and R_DS(on)=2.04 mΩ, conduction loss = I²R = 100² × 0.00204 = 20.4 W. The PG-TDSON-8 (SS08) package achieves a θ_JC of approximately 2.0 °C/W, so junction temperature rise above case = 20.4 × 2.0 = ~41 °C. Keep the case below 135 °C to maintain junction under 175 °C, which requires mounting on at least 100 mm² of top-side copper pour on a 1-oz 4-layer PCB.
Use the Kelvin-source pin (pin 4) as the gate-drive return path rather than bonding it to the power source. This eliminates source-inductance-induced R_DS(on) degradation during fast switching transitions (e.g., 50 V/ns). Place the gate driver within 5 mm of pins 4 and 5, and use a 10 Ω gate resistor to dampen ringing without slowing switching excessively.
Do not exceed V_GS=±20 V (even briefly) - the thin gate oxide of the OptiMOS 6 platform is not as robust as older OptiMOS generations. Use a gate-clamp TVS or a gate-driver with integrated V_GS clamping. Also, do not assume the source pins (1-3) and the thermal pad are internally bonded; the datasheet symbol shows them as separate for Kelvin-source flexibility - always check the specific variant's internal connection.
Keep the high-current loop (drain-source) area below 50 mm² to minimize parasitic inductance that can overshoot V_DS above 40 V during turn-off. Use 4-layer PCB with 2-oz top-side copper for the source/drain pads and a solid ground plane on layer 2 for return current. Place gate-loop components on the opposite side of the chip from the power loop.
Estimated: at 200 kHz switching with 100 A load, the dV/dt on the drain node can exceed 10 V/ns, radiating EMI in the 30-300 MHz band. Add a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source if EMI fails CISPR 25 Class 5 testing in automotive applications.
合规信息
AEC-Q101 automotive qualified per Infineon OptiMOS 6 family specifications. RoHS and REACH compliant. Lead-free and halogen-free per the TMA1 suffix designation.
