IAUC60N06S5L073ATMA1 vs IAUC100N04S6N028ATMA1 对比
详细并排对比 IAUC60N06S5L073ATMA1 出自 Infineon 和 IAUC100N04S6N028ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC60N06S5L073ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 6 40V |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| 封装 | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (TDSON-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C | -55 °C to +175 °C |
| Technology | Trench (OptiMOS 5) | MOSFET (Metal Oxide) |
| 引脚数 | 8 | — |
| Configuration | Single N-Channel | — |
| Qualification | AEC-Q101 automotive grade | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Automotive Qualified | — | Yes |