IAUC90N10S5N062ATMA1 vs IAUC50N08S5L096ATMA1 对比
详细并排对比 IAUC90N10S5N062ATMA1 出自 Infineon 和 IAUC50N08S5L096ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ 量产中规格对比
| 参数 | IAUC90N10S5N062ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.95 | $0.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 80 V |
| Continuous Drain Current (ID) at Tc=25C | 90 A | — |
| Maximum On-Resistance RDS(on) max at VGS=10V | 6.2 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) typ | 3.8 V | — |
| Maximum Power Dissipation (Tc=25C) | 115 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-33 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5, Generation 5) | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS / Green Product | Yes (RoHS compliant, Green Product) | — |
| Lead-Free | Yes | Yes |
| Product Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| 工作温度范围 | — | -55°C to +175°C |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |