IAUCN04S7L005ATMA1 vs IAUCN04S7L042GATMA1 对比

详细并排对比 IAUCN04S7L005ATMA1 出自 Infineon 和 IAUCN04S7L042GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7L005ATMA1 IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon

IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon

IAUCN04S7L005ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L005ATMA1 IAUCN04S7L042GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.85 $0.86
Technology OptiMOS 7 (trench N-channel MOSFET) Trench N-Channel MOSFET
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, T_C=25°C) 430 A (Tj) —
Continuous Drain Current (I_D, T_C=100°C) [DATA_NEEDED: I_D at T_C=100°C] —
On-Resistance R_DS(on) max 0.52 mΩ —
Power Dissipation (P_D) 179 W (T_C) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge (Q_g) [DATA_NEEDED: total Q_g in nC] —
工作温度范围 -55°C to +175°C (Tj) -55C to +175C (Tj)
封装 PG-TDSON-8-43 (TDSON-8) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
安装类型 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
引脚数量 8 —
Automotive Qualification AEC-Q101 qualified —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
MSL 等级 [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

数据手册与资源

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