IAUCN04S7L005ATMA1 vs IAUCN04S7L042GATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7L005ATMA1 por Infineon y IAUCN04S7L042GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ ActivoInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7L005ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,85 | $0,86 |
| Technology | OptiMOS 7 (trench N-channel MOSFET) | Trench N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 430 A (Tj) | — |
| Continuous Drain Current (I_D, T_C=100°C) | [DATA_NEEDED: I_D at T_C=100°C] | — |
| On-Resistance R_DS(on) max | 0.52 mΩ | — |
| Power Dissipation (P_D) | 179 W (T_C) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: total Q_g in nC] | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C (Tj) | -55C to +175C (Tj) |
| Encapsulado | PG-TDSON-8-43 (TDSON-8) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Tipo de montaje | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Recuento de pines | 8 | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |