IAUCN04S7N006ATMA1 vs IAUC100N04S6L020ATMA1 对比
详细并排对比 IAUCN04S7N006ATMA1 出自 Infineon 和 IAUC100N04S6L020ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN04S7N006ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.95 | $0.86 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 175 A | — |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 6 |
| 封装 | PG-TDSON-8-43 | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C | -55 °C to +175 °C (TJ) |
| Junction Temperature Max | 175 C | — |
| Power Dissipation Max (Pd) | [DATA_NEEDED: Pd max] | — |
| Gate Charge Total (Qg) | [DATA_NEEDED: Qg total] | — |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Qualification | — | Automotive grade |
| Packaging | — | Tape & Reel (TMA1) |
| RoHS 状态 | — | Compliant |