IAUCN04S7N006ATMA1 vs IAUCN04S7N009ATMA1 对比
详细并排对比 IAUCN04S7N006ATMA1 出自 Infineon 和 IAUCN04S7N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N006ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.95 | $1.55 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 175 A | — |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 5 (trench) | MOSFET (Metal Oxide) |
| 封装 | PG-TDSON-8-43 | PG-TDSON-8-34 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C | — |
| Junction Temperature Max | 175 C | — |
| Power Dissipation Max (Pd) | [DATA_NEEDED: Pd max] | — |
| Gate Charge Total (Qg) | [DATA_NEEDED: Qg total] | — |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| 工作温度 | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| RoHS 状态 | — | Compliant |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |