IAUCN08S7L013ATMA1 vs IAUCN08S7L033ATMA1 对比

详细并排对比 IAUCN08S7L013ATMA1 出自 Infineon 和 IAUCN08S7L033ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 ✓ 量产中
Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7L013ATMA1 IAUCN08S7L033ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.96 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V 80 V
Maximum On-Resistance (RDS(on) max) 1.26 mΩ —
连续漏极电流(TC=25°C) [DATA_NEEDED: continuous drain current at TC=25C] —
Continuous Drain Current (TJ) 293 A —
Power Dissipation (TC) 219 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage range] [DATA_NEEDED: VGS(th) typical]
Gate Drive Voltage (typical) 10 V —
工作温度范围 -55 °C to +175 °C -55°C to +175°C (TJ)
封装 PG-TDSON-8-53 (TDSON-8 FL) PG-TDSON-8-34 (SSO8, 5x6 mm²)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020, typical for this package)
Qualification AEC-Q101 (automotive) Automotive Grade (per Infineon datasheet header)
RoHS 状态 Compliant Compliant
Packaging Tape & Reel (suffix ATMA1) —
Series — Automotive OptiMOS 7
晶体管类型 — N-Channel MOSFET
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Technology — OptiMOS 7 trench MOSFET

数据手册与资源

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