IAUCN08S7L024ATMA1 vs IPC50N04S5L5R5ATMA1 对比
详细并排对比 IAUCN08S7L024ATMA1 出自 Infineon 和 IPC50N04S5L5R5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN08S7L024ATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.68 | $0.36 |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| 封装 | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (Tj) | -55 °C to +175 °C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |