IAUCN08S7N024TATMA1 vs IAUCN08S7L033ATMA1 对比
详细并排对比 IAUCN08S7N024TATMA1 出自 Infineon 和 IAUCN08S7L033ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ 量产中规格对比
| 参数 | IAUCN08S7N024TATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.45 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | Automotive OptiMOS 7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| 封装 / 外壳 | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55°C to +175°C (TJ) |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 状态 | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| 封装 | — | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020, typical for this package) |