IAUCN08S7N034ATMA1 vs IAUC100N08S5N043ATMA1 对比
详细并排对比 IAUCN08S7N034ATMA1 出自 Infineon 和 IAUC100N08S5N043ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN08S7N034ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.48 | $1.72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A | 100 A (package limited) |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | — |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | — |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | — |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | — |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | — |
| Power Dissipation (P<sub>D</sub>) | 118 W | — |
| 工作结温 | -55°C to +175°C | — |
| 封装 | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-34 (SuperSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL 1 (unlimited floor life) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS 状态 | Compliant | — |
| Part Series | — | IAUC / OptiMOS 5 |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (chip-limited) | — | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | — | 4.3 mΩ |
| Maximum Power Dissipation (P<sub>D</sub>) | — | 125 W (T<sub>C</sub>) |
| 工作温度范围 | — | -55°C to +175°C |
| 引脚数量 | — | 8 |
| 湿敏等级（MSL） | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |
| Technology | — | OptiMOS 5 (Trench) |
| Channel Mode | — | Enhancement |