IAUCN08S7N036TATMA1 vs IAUC120N04S6N010ATMA1 对比

详细并排对比 IAUCN08S7N036TATMA1 出自 Infineon 和 IAUC120N04S6N010ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7N036TATMA1 IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon

IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon

IAUCN08S7N036TATMA1 ✓ 量产中
Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7N036TATMA1 IAUC120N04S6N010ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.05 $0.68
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Polarity N-Channel Single N-channel
Drain-Source Voltage (V_DS) 80 V —
Gate-Source Voltage (V_GS) ±20 V —
Continuous Drain Current (I_D) 129 A —
R_DS(on) max @ V_GS=10V 3.60 mΩ —
Power Dissipation (P_D) 118 W (T_C = 25 °C) —
Input Capacitance (C_iss) 3120 pF (typ) —
Output Capacitance (C_oss) 1280 pF (typ) —
Reverse Transfer Capacitance (C_rss) 23 pF (max) —
Turn-on Delay Time (t_d(on)) 14 ns (typ) —
Rise Time (t_r) 8 ns (typ) —
Turn-off Delay Time (t_d(off)) 17 ns (typ) —
Fall Time (t_f) 8 ns (typ) —
封装 PG-LHDSO-10-1 (SSO10T, 5x7 mm) PG-TDSON-8-34 (5x6 mm leadless)
Cooling Top-side cooled —
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Technology — OptiMOS 6
工作温度范围 — -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
MSL 等级 — 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec

数据手册与资源

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