IAUCN08S7N036TATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N036TATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N036TATMA1
IAUCN08S7N036TATMA1 - 80V, 3.6mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N036TATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 | β |
| Polarity | N-Channel | Single N-channel |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Gate-Source Voltage (V_GS) | Β±20 V | β |
| Continuous Drain Current (I_D) | 129 A | β |
| R_DS(on) max @ V_GS=10V | 3.60 mΞ© | β |
| Power Dissipation (P_D) | 118 W (T_C = 25 Β°C) | β |
| Input Capacitance (C_iss) | 3120 pF (typ) | β |
| Output Capacitance (C_oss) | 1280 pF (typ) | β |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | β |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | β |
| Rise Time (t_r) | 8 ns (typ) | β |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | β |
| Fall Time (t_f) | 8 ns (typ) | β |
| Package | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-TDSON-8-34 (5x6 mm leadless) |
| Cooling | Top-side cooled | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Technology | β | OptiMOS 6 |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| MSL Level | β | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |