IAUCN10S7N021ATMA1 vs IAUT300N08S5N012ATMA2 对比
详细并排对比 IAUCN10S7N021ATMA1 出自 Infineon 和 IAUT300N08S5N012ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN10S7N021ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $2.20 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | 1200 A (per datasheet, typical) |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 状态 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™-5 80 V |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| 工作温度范围 | — | -55 °C to +175 °C (TJ) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |