IAUCN10S7N021ATMA1 vs IAUT300N08S5N012ATMA2 Comparison

Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IAUT300N08S5N012ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Active

Specification Comparison

Parameter IAUCN10S7N021ATMA1 IAUT300N08S5N012ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] 1200 A (per datasheet, typical)
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-HSOF-8-1 (8-pin HSOF with drain tab)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
RoHS Status Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™-5 80 V
Transistor Type — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 300 A
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V
Operating Temperature Range — -55 °C to +175 °C (TJ)
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant
MSL Level — [DATA_NEEDED: MSL level]

Datasheets & Resources

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