IAUT165N08S5N029ATMA2 vs ISC151N08NM6ATMA1 对比
详细并排对比 IAUT165N08S5N029ATMA2 出自 Infineon 和 ISC151N08NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 ✓ 量产中规格对比
| 参数 | IAUT165N08S5N029ATMA2 | ISC151N08NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.30 | $0.78 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUT165N08S5N029ATMA2 | — |
| Product Family | OptiMOS™ 5 | — |
| 晶体管类型 | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A | — |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W | — |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ | — |
| 工作温度范围 | -55 °C to +175 °C (T<sub>j</sub>) | — |
| 封装 / 外壳 | PG-HSOF-8-1 (8+Tab, Surface Mount) | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL Rating | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| 连续漏极电流（TC=25°C） | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| 封装 | — | PG-TDSON-8 FL |
| 引脚数 | — | 8 |
| Channel Mode | — | Enhancement |
| 工作温度 | — | -55 °C to +175 °C |
| RoHS 状态 | — | Compliant |