IAUT300N08S5N012ATMA2 vs IAUC60N04S6N031HATMA1 对比

详细并排对比 IAUT300N08S5N012ATMA2 出自 Infineon 和 IAUC60N04S6N031HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ 量产中
Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ 量产中

规格对比

参数 IAUT300N08S5N012ATMA2 IAUC60N04S6N031HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.20 $0.95
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V —
晶体管类型 N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) —
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
工作温度范围 -55 °C to +175 °C (TJ) -55 °C to +175 °C (Tj)
封装 PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8-56 (5 mm x 6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Part Family — IAUC (Integrated Automotive Half-Bridge)
Process Technology — OptiMOS 6 40V
Configuration — Half-Bridge (2 N-Channel MOSFETs)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tj) — 60 A
Power Dissipation (P_D, Tc=25C) — 75 W
R_DS(on) at VGS=10V — 3.1 mΩ
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
引脚数量 — 8
RoHS 状态 — Compliant

数据手册与资源

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