IAUT300N10S5N015ATMA1 vs IAUC100N04S6L020ATMA1 对比

详细并排对比 IAUT300N10S5N015ATMA1 出自 Infineon 和 IAUC100N04S6L020ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ 量产中
Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ 量产中

规格对比

参数 IAUT300N10S5N015ATMA1 IAUC100N04S6L020ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.10 $0.86
Technology OptiMOS 5 N-Channel Power MOSFET OptiMOS 6
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 300 A —
Power Dissipation (PD, Tc) 375 W —
RDS(on) (typ, VGS=10V) 1.5 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) value] —
工作温度范围 -55°C to +175°C -55 °C to +175 °C (TJ)
封装 PG-HSOF-8-1 (HSOF-8) PG-TDSON-8 (SS08, 5x6 mm leadless)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
MSL 等级 MSL1 (260°C peak reflow) —
RoHS Compliance RoHS compliant (Green product) —
Avalanche Tested 100% avalanche tested —
Polarity N-Channel —
Mode of Operation Enhancement-mode —
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)
RoHS 状态 — Compliant

数据手册与资源

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