IAUT300N10S5N015ATMA1 vs IAUZ40N08S5N100ATMA1 对比

详细并排对比 IAUT300N10S5N015ATMA1 出自 Infineon 和 IAUZ40N08S5N100ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ 量产中
Infineon
IAUZ40N08S5N100ATMA1 IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 ✓ 量产中

规格对比

参数 IAUT300N10S5N015ATMA1 IAUZ40N08S5N100ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.10 $0.71
Technology OptiMOS 5 N-Channel Power MOSFET OptiMOS-5 N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID, Tc) 300 A —
Power Dissipation (PD, Tc) 375 W —
RDS(on) (typ, VGS=10V) 1.5 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) value] —
工作温度范围 -55°C to +175°C -55 °C to +175 °C (TJ)
封装 PG-HSOF-8-1 (HSOF-8) PG-TDSON-8 (S3O8) 3.3 × 3.3 mm
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
MSL 等级 MSL1 (260°C peak reflow) [DATA_NEEDED: MSL rating]
RoHS Compliance RoHS compliant (Green product) —
Avalanche Tested 100% avalanche tested —
Polarity N-Channel —
Mode of Operation Enhancement-mode —
Continuous Drain Current (ID, Tc=25°C) — 40 A
Power Dissipation (PD, Tc=25°C) — 68 W
On-Resistance RDS(on) max — 10 mΩ @ VGS=10 V, ID=20 A
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg typ — 24.2 nC @ VGS=10 V
Input Capacitance Ciss — 1591 pF @ VDS=40 V
Gate-Source Voltage VGS max — ±20 V
RoHS 状态 — Compliant
Channel Type — N-Channel

数据手册与资源

浏览全部产品 创建 BOM 获取报价