IAUZ40N06S5L050ATMA1 vs BSC059N04LSGATMA1 对比
详细并排对比 IAUZ40N06S5L050ATMA1 出自 Infineon 和 BSC059N04LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ 量产中
规格对比
| 参数 | IAUZ40N06S5L050ATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $0.39 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | — |
| Drain Current at T<sub>j</sub> | 90 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΩ | — |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 µA | — |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 71 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | OptiMOS 3 (N-channel trench MOSFET) |
| Automotive Qualification | AEC-Q100 qualified | — |
| RoHS 状态 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 73 A |
| Continuous Drain Current (ID, Ta=25C) | — | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 5.9 mOhm |
| Power Dissipation (Tc=25C) | — | 50 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | — | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total, typical nC] |
| 工作温度范围 | — | -55 C to +150 C |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| REACH Status | — | Compliant |
| Channel Type | — | N-Channel |