IAUZ40N06S5N050ATMA1 vs BSC0993NDATMA1 对比
详细并排对比 IAUZ40N06S5N050ATMA1 出自 Infineon 和 BSC0993NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUZ40N06S5N050ATMA1 | BSC0993NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $1.32 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC) | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V | — |
| Maximum Power Dissipation (PD) | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 trench MOSFET |
| Channel Type | N-Channel Enhancement Mode | — |
| 封装 | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TISON-8 |
| 引脚数量 | 8 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | — |
| 工作温度范围 | -55C to +175C | -55C to +150C (junction) |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 30V |
| Configuration | — | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |