IAUZ40N06S5N050ATMA1 vs BSC0993NDATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N06S5N050ATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUZ40N06S5N050ATMA1 | BSC0993NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC) | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V | — |
| Maximum Power Dissipation (PD) | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 trench MOSFET |
| Channel Type | N-Channel Enhancement Mode | — |
| Package | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TISON-8 |
| Pin Count | 8 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | — |
| Operating Temperature Range | -55C to +175C | -55C to +150C (junction) |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 30V |
| Configuration | — | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |