IAUZ40N08S5N100ATMA1 vs BSC123N08NS3GATMA1 对比
详细并排对比 IAUZ40N08S5N100ATMA1 出自 Infineon 和 BSC123N08NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUZ40N08S5N100ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $0.71 |
| Technology | OptiMOS-5 N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 40 A | — |
| Power Dissipation (PD, Tc=25°C) | 68 W | — |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | — |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | — |
| Gate-Source Voltage VGS max | ±20 V | — |
| 工作温度范围 | -55 °C to +175 °C (TJ) | — |
| 封装 | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 状态 | Compliant | Compliant with exemption |
| Channel Type | N-Channel | N-Channel |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| 工作结温 | — | -55C to +150C |
| Automotive Qualified | — | Yes (AEC-Q101) |