IAUZN04S7L025ATMA1 vs ISC015N06NM5ATMA1 对比

详细并排对比 IAUZN04S7L025ATMA1 出自 Infineon 和 ISC015N06NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon

IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon

IAUZN04S7L025ATMA1 ✓ 量产中
Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 ✓ 量产中

规格对比

参数 IAUZN04S7L025ATMA1 ISC015N06NM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 OptiMOS 5
Technology N-Channel Trench MOSFET Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 65 W —
工作结温 -55C to +175C —
封装 PG-TSDSON-8-44 (S3O8) PG-TDSON-8 (PQFN 5x6) Drain-Down
安装类型 Surface Mount Surface Mount
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] —
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
工作温度范围 — -55 C to +175 C
RoHS 状态 — Compliant
MSL (Moisture Sensitivity Level) — 1

数据手册与资源

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