IAUZN04S7N049ATMA1 vs IAUCN04S7L050HATMA1 对比
详细并排对比 IAUZN04S7N049ATMA1 出自 Infineon 和 IAUCN04S7L050HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUZN04S7N049ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 | OptiMOS™ 7 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>a</sub>) | 14 A | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 70 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) | 1.2 to 4.9 mOhm | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: VGS(th)] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>c</sub>) | 45 W | — |
| 工作温度范围 | -55C to +175C (junction) | — |
| 封装 | PG-TSDSON-8-44 (5x6 mm) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS-7 trench-gate | Trench MOSFET, OptiMOS™ 7 40V |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| 工作结温 | — | -55 °C to +175 °C |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | — | Compliant |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |