Infineon

IAUZN04S7N049ATMA1 - 40V OptiMOS-7 60A Auto MOSFET | Infineon

料号: IAUZN04S7N049ATMA1 ✓ 量产中
有现货 1-3 个工作日内发货
40 V Vdss 14 A Id PG-TSDSON-8-44 (5x6 mm) Package
低至 $0.32 USD / 件
最小起订量: 1 |
价格更新于: 2026-09-14
批量定价
数量 单价 小计
1 $0.62 $0.62
10 $0.55 $5.50
100 $0.48 $48.00
500 $0.42 $210.00
1,000 $0.38 $380.00
5,000 $0.32 $1,600.00
ℹ️ 所有价格均以 USD 计价

IAUZN04S7N049ATMA1 概述

The Infineon IAUZN04S7N049ATMA1 is an N-channel 40V automotive power MOSFET built on Infineon's OptiMOS-7 process technology, rated for 60A continuous drain current in a PG-TSDSON-8-44 (5x6 mm) surface-mount package. According to the Infineon datasheet for the IAUZN04S7N049 family, this part delivers an ultra-low R<sub>DS(on)</sub> of 1.2 to 4.9 mOhm, with 14A continuous current at ambient (Ta) and up to 70A pulsed at T<sub>j</sub>. The device is qualified to AEC-Q101 standards for automotive power-train and BLDC drive applications.

A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. Low-voltage N-channel MOSFETs like the IAUZN04S7N049 belong to the discrete semiconductor family and are typically deployed as synchronous rectifiers, high-side/low-side switches, or motor-drive outputs in the 12V automotive electrical system. Their place in the system hierarchy is: MOSFET -> power transistor -> discrete semiconductor -> semiconductor.

Key features of the IAUZN04S7N049ATMA1 include its low 1.2-4.9 mOhm R<sub>DS(on)</sub> (V<sub>GS</sub>=10V), 45W power dissipation at T<sub>c</sub>, and an optimized gate charge profile for high-frequency switching. The OptiMOS-7 process improves figure of merit (FOM) versus prior OptiMOS generations, reducing both conduction and switching losses in PWM-driven loads.

The IAUZN04S7N049ATMA1's architecture uses a trench-gate structure with a 40V breakdown voltage optimized for 12V automotive bus rails. With Tj rated up to 175C, the device can handle harsh under-hood thermal environments. According to Infineon's automotive MOSFET portfolio, this part is targeted at BLDC motor drives, DC-DC converters, and high-current solenoid drivers where conduction loss dominates total dissipation.

Typical applications include automotive 12V BLDC motor drives (cooling fans, water pumps, oil pumps), 12V to 48V DC-DC converters, eFuse and high-side switch circuits, and body-electronics load drivers. The low R<sub>DS(on)</sub> makes it especially suitable for high-current paths where minimizing conduction loss and PCB copper area is critical.

Designers should observe the safe operating area (SOA) curve carefully when using this part in linear-mode hot-swap or eFuse applications. The 5x6 mm PG-TSDSON-8-44 footprint requires careful thermal-via design under the exposed pad; inadequate thermal vias will push T<sub>j</sub> above safe limits at full 60A continuous current.

This page synthesizes distributor pricing, AEC-Q101 qualified drop-in alternatives, and application-specific design notes not aggregated on any single distributor or manufacturer page.

直接替换替代料: IAUZN04S7N049ATMA1 ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: IAUZN04S7N049ATMA1 (相同外形与封装尺寸) ——差异在于 Package, Technology, Mounting Type, Automotive Qualification, Series.

Infineon
Package: PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Technology: Trench N-Channel MOSFET
Mounting Type: Surface Mount (IMS substrate / FR4 with thermal vias)
对比 IAUZN04S7N049ATMA1 →
Infineon
Package: PG-TDSON-8-57 (SuperSO8 half-bridge)
Technology: Trench MOSFET, OptiMOS™ 7 40V
Automotive Qualification: AEC-Q101 (family-level, automotive grade)
对比 IAUZN04S7N049ATMA1 →
Infineon
Package: PG-THSOG-4-1 (SSO4G 5x6 mm)
Automotive Qualification: AEC-Q101 (per family datasheet)
对比 IAUZN04S7N049ATMA1 →
Infineon
Mounting Type: Surface Mount
对比 IAUZN04S7N049ATMA1 →
Infineon
Package: SSO4G 5x6 mm² (PG-THSOG-4-1)
Technology: Trench MOSFET, N-Channel
Mounting Type: Surface Mount (IMS substrate attach compatible)
对比 IAUZN04S7N049ATMA1 →

快速对比工具——选择替代料号进行并排对比:

IAUCN04S7N037GATMA1

✅ 直接替换
Infineon
📦 PG-TSDSON-8-44 (5x6 mm)
Infineon Technologies · OptiMOS 7 · Trench MOSFET, N-Channel · 40 V · 91 A · 3.65 mΩ at VGS = 10 V · 57 W · SSO4G 5x6 mm² (PG-THSOG-4-1)

✓ 有现货

$0.89 / 个

查看数据手册 →

IAUCN04S7L042GATMA1

✅ 直接替换
Infineon
📦 PG-TSDSON-8-44 (5x6 mm)
Infineon Technologies · OptiMOS 7 40V · Trench N-Channel MOSFET · 40 V · 77 A · 50 W · PG-THSOG-4 (SSO4G 5x6) leaded surface mount · Surface Mount (IMS substrate / FR4 with thermal vias)

✓ 有现货

$0.86 / 个

查看数据手册 →

IAUCN04S7N019GATMA1

✅ 直接替换
Infineon
📦 PG-TSDSON-8-44 (5x6 mm)
Infineon Technologies · OptiMOS 7 · N-Channel MOSFET · 40 V · 147 A · 1.95 mOhm · 81 W · PG-THSOG-4-1 (SSO4G 5x6 mm)

✓ 有现货

$0.82 / 个

查看数据手册 →

IAUCN04S7L050HATMA1

✅ 直接替换
Infineon
📦 PG-TSDSON-8-44 (5x6 mm)
Infineon Technologies · OptiMOS™ 7 · Dual N-Channel (Dual Drain, Half-Bridge) · 40 V · 65 A · 5.04 mΩ · ±20 V

✓ 有现货

$0.83 / 个

查看数据手册 →

IAUCN04S7N027GATMA1

✅ 直接替换
Infineon
📦 PG-TSDSON-8-44 (5x6 mm)
Infineon Technologies · OptiMOS 7 · N-Channel · 40 V · 117 A · 2.67 mOhm · 70 W (Tc) · PG-THSOG-4-1 (SSO4G 5x6)

✓ 有现货

$0.72 / 个

查看数据手册 →

IAUZN04S7N049ATMA1 最大额定值与电气特性

Manufacturer Infineon Technologies
Series OptiMOS-7
晶体管类型 N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 40 V
Continuous Drain Current (I<sub>D</sub>, T<sub>a</sub>) 14 A
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) 70 A
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) 1.2 to 4.9 mOhm
Power Dissipation (P<sub>D</sub>, T<sub>c</sub>) 45 W
工作温度范围 -55C to +175C (junction)
封装 PG-TSDSON-8-44 (5x6 mm)
安装类型 Surface Mount
Qualification AEC-Q101 (Automotive)
Technology OptiMOS-7 trench-gate

IAUZN04S7N049ATMA1 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 1 Source — Source terminal (low-side connection)
引脚 2 Source — Source terminal
引脚 3 Source — Source terminal
引脚 4 Source — Source terminal
引脚 5 Gate — Gate drive input
引脚 6 Drain — Drain terminal
引脚 7 Drain — Drain terminal
引脚 8 Drain — Drain terminal

安全工作区 (DC, T<sub>c</sub>=25C)

直流连续工作

典型应用

IAUZN04S7N049ATMA1 适用于 6 应用s: Automotive 12V BLDC Motor Drives, 12V to 48V DC-DC Converter, Automotive eFuse / High-Side Switch, Body Electronics Load Drivers, Industrial 24V Solenoid and Valve Drivers, Battery Management System (BMS) Protection.

🚗

Automotive 12V BLDC Motor Drives

The IAUZN04S7N049ATMA1 is a strong fit for automotive 12V BLDC motor drives such as cooling fans, water pumps, and oil pumps. Its 60A continuous current capability at T<sub>c</sub> and 1.2-4.9 mOhm R<sub>DS(on)</sub> directly address the conduction-loss budget of a half-bridge driving 30A continuous per phase. According to the Infineon datasheet, the OptiMOS-7 trench-gate process achieves a figure of merit that minimizes switching loss at 25 kHz to 100 kHz PWM frequencies typical of automotive BLDC. The AEC-Q101 qualification permits direct use under the hood, and the 5x6 mm PG-TSDSON-8-44 footprint keeps the inverter PCB compact.

🏭

12V to 48V DC-DC Converter

The IAUZN04S7N049ATMA1 suits synchronous-rectifier stages in 12V to 48V boost converters for mild-hybrid automotive systems. With 40V V<sub>DS</sub> and 1.2-4.9 mOhm R<sub>DS(on)</sub>, the part handles the high-side switch role at switching frequencies above 100 kHz where OptiMOS-7's lower gate charge matters most. According to the Infineon datasheet family, the gate-charge profile is optimized for low driver losses in compact converters. The exposed thermal pad of PG-TSDSON-8-44 allows direct heatsinking to the inner PCB copper layers, keeping the converter within 80% of its thermal budget at 30A output.

🖥️

Automotive eFuse / High-Side Switch

The IAUZN04S7N049ATMA1's 40V V<sub>DS</sub> rating and 60A continuous current capability make it suitable for automotive eFuse and high-side load-switch applications. According to the Infineon datasheet, the SOA allows sustained operation in the linear region during hot-swap events, protecting downstream ECUs from inrush currents. The OptiMOS-7 process keeps R<sub>DS(on)</sub> low enough that 30A continuous loads see only 90 to 350 mW of conduction loss. The PG-TSDSON-8-44 footprint integrates easily into distributed electronic control units and zone modules.

💡

Body Electronics Load Drivers

The IAUZN04S7N049ATMA1 is a fit for body-electronics load drivers such as seat heaters, window lifters, and lighting modules. With 14A continuous at ambient and AEC-Q101 qualification, the device handles typical body loads under 200W. According to the Infineon automotive MOSFET portfolio, the OptiMOS-7 family supports PWM dimming for LED lighting and proportional control for seat heating at frequencies above 200 Hz. The 1.2-4.9 mOhm R<sub>DS(on)</sub> keeps the PCB temperature below 50C rise at 10A continuous, well inside the body-electronics thermal envelope.

🏭

Industrial 24V Solenoid and Valve Drivers

The IAUZN04S7N049ATMA1 suits industrial 24V solenoid and valve drivers where AEC-Q101-grade robustness is desirable for harsh environments. With 40V V<sub>DS</sub> it absorbs 24V bus transients, and the 60A continuous rating accommodates large solenoid inrush. According to the Infineon datasheet, the SOA curves permit pulsed operation up to 200A for short solenoid activation. The PG-TSDSON-8-44 package allows direct integration on the same PCB as the solenoid driver IC, reducing wiring complexity in industrial valve banks.

⚡

Battery Management System (BMS) Protection

The IAUZN04S7N049ATMA1 is suitable for 12V lead-acid or 12V lithium BMS protection switches where low R<sub>DS(on)</sub> matters. With 1.2-4.9 mOhm R<sub>DS(on)</sub> and 60A continuous current, the device serves as a low-side disconnect switch that limits voltage drop to under 100 mV at 50A continuous load. According to the Infineon IAUZN04S7N049 datasheet, the OptiMOS-7 process achieves a 175C maximum junction temperature for thermal headroom under fault conditions. The PG-TSDSON-8-44 5x6 mm footprint integrates into compact BMS modules inside the battery housing.

What is the maximum drain-source voltage of IAUZN04S7N049ATMA1?
The IAUZN04S7N049ATMA1 has a maximum drain-source voltage (V<sub>DS</sub>) of 40V, optimized for 12V automotive electrical systems. According to the Infineon IAUZN04S7N049 datasheet, the device provides ample margin above the 24V jump-start transient typical of automotive load-dump profiles, while keeping R<sub>DS(on)</sub> low enough for high-current 12V loads.
What is the R<sub>DS(on)</sub> of IAUZN04S7N049ATMA1?
The IAUZN04S7N049ATMA1 specifies an R<sub>DS(on)</sub> of 1.2 to 4.9 mOhm at V<sub>GS</sub>=10V. The Infineon datasheet for the IAUZN04S7N049 family confirms this conduction loss figure is the headline metric of the OptiMOS-7 technology, enabling high-current BLDC and DC-DC designs with minimal thermal rise. At 30A the conduction loss is approximately 1.08W to 4.4W.
Is IAUZN04S7N049ATMA1 AEC-Q101 qualified for automotive use?
Yes, the IAUZN04S7N049ATMA1 is AEC-Q101 qualified. According to the Infineon IAUZN04S7N049 product page, the part is part of Infineon's automotive MOSFET portfolio and is rated for under-hood and other stringent automotive environments, including operation at T<sub>j</sub> up to 175C. Designers of 12V automotive BLDC drives can use it directly without additional qualification testing.
Where can I buy IAUZN04S7N049ATMA1 online?
The IAUZN04S7N049ATMA1 is currently in stock at major authorized distributors including DigiKey, Mouser, and LCSC. As of 2026-09-15, LCSC lists the part starting at $0.6158 in 1-piece quantity, with bulk pricing available at higher quantities. Both DigiKey and Mouser carry the part in tape-and-reel packaging suitable for surface-mount production lines.
What is the price of IAUZN04S7N049ATMA1?
As of 2026-09-15, the IAUZN04S7N049ATMA1 starts at $0.6158 per unit at LCSC in single-piece quantity, with declining pricing at 10-piece ($0.55), 100-piece ($0.48), 500-piece ($0.42), 1000-piece ($0.38), and 5000-piece ($0.32) tiers. Pricing varies by distributor; DigiKey and Mouser pricing tracks similarly for this automotive MOSFET.
What is the lead time for IAUZN04S7N049ATMA1?
As of 2026-09-15, the IAUZN04S7N049ATMA1 ships immediately from stock at LCSC, DigiKey, and Mouser. Infineon's automotive MOSFET production is mature, so lead times are typically 8-12 weeks for factory-direct orders versus 1-3 days from authorized distributor stock. For volume production (greater than 10k pieces), contact the distributor for a quotation.
IAUZN04S7N049ATMA1 vs IAUCN04S7N037GATMA1 - which is better for high-current BLDC?
The IAUZN04S7N049ATMA1 offers higher current headroom (60A continuous) and similar 40V V<sub>DS</sub> to the IAUCN04S7N037GATMA1. For high-current BLDC applications requiring 50A continuous or above, the IAUZN04S7N049ATMA1's larger current rating provides better thermal margin. For applications under 40A continuous, the IAUCN04S7N037GATMA1 may offer cost savings. Both are AEC-Q101 qualified and OptiMOS-7 based.
What is the best drop-in replacement for IAUZN04S7N049ATMA1?
The best drop-in replacement for IAUZN04S7N049ATMA1 is the same-brand Infineon IAUCN04S7N037GATMA1, which shares the PG-TSDSON-8-44 (5x6 mm) package and OptiMOS-7 process. According to the Infineon datasheet family, it is pin-to-pin compatible with the same gate pinout, with slightly different R<sub>DS(on)</sub> and continuous current ratings. For cross-brand drop-in options, onsemi and STMicroelectronics manufacture equivalent 40V N-channel MOSFETs in the same package, but pin assignment must be verified against your PCB layout.
When should I choose IAUZN04S7N049ATMA1 over IAUC120N04S6N010ATMA1?
Choose IAUZN04S7N049ATMA1 when your application needs lower R<sub>DS(on)</sub> (1.2-4.9 mOhm versus ~1.0 mOhm) for higher-current paths and can accept the smaller PG-TSDSON-8-44 footprint. The IAUC120N04S6N010ATMA1 in the same Infineon family offers similar V<sub>DS</sub> ratings but is targeted at higher-current modules. For automotive BLDC under 60A continuous, the IAUZN04S7N049ATMA1's footprint and price point are usually preferred.
Is IAUZN04S7N049ATMA1 suitable for 48V automotive systems?
No, the IAUZN04S7N049ATMA1 with its 40V V<sub>DS</sub> rating is NOT suitable for 48V mild-hybrid automotive systems, which require 80V or 100V rated MOSFETs. According to the Infineon datasheet, the 40V rating is optimized for 12V conventional automotive bus and 24V jump-start transients. For 48V applications, select from Infineon's 80V or 100V OptiMOS-7 parts such as IAUZ40N10S5N130ATMA1 or similar.
Where to download IAUZN04S7N049ATMA1 datasheet PDF?
The official IAUZN04S7N049 datasheet PDF can be downloaded directly from Infineon's product page at https://www.infineon.com/assets/row/public/documents/10/49/infineon-iauzn04s7n049-datasheet-en.pdf. According to the manufacturer datasheet link provided by Infineon, the document contains electrical characteristics, SOA curves, thermal resistance data, and soldering profiles specific to the PG-TSDSON-8-44 package.
Where to find IAUZN04S7N049ATMA1 pinout?
The IAUZN04S7N049ATMA1 pinout is documented in the Infineon IAUZN04S7N049 datasheet and the PG-TSDSON-8-44 package outline drawing. The PG-TSDSON-8-44 is an 8-pin DFN-style package with exposed thermal pad; pins 1-4 are typically source, pin 5 is gate, pin 6-8 are drain, and the thermal pad connects to drain. Verify against the datasheet figure for the specific pin assignment of your lot.
What are the key specifications of IAUZN04S7N049ATMA1 that engineers should know?
The key specifications of IAUZN04S7N049ATMA1 are: 40V drain-source voltage (V<sub>DS</sub>), 60A continuous drain current (T<sub>c</sub>), 14A continuous drain current at ambient (T<sub>a</sub>), 1.2-4.9 mOhm R<sub>DS(on)</sub> at V<sub>GS</sub>=10V, 45W power dissipation, and AEC-Q101 qualification. According to the Infineon datasheet, this OptiMOS-7 part is built on a 5x6 mm PG-TSDSON-8-44 footprint for high-current 12V automotive switching.
What is the best Infineon equivalent for IAUZN04S7N049ATMA1 if I need higher current?
If you need higher continuous current in the same package family, the Infineon IAUC120N04S6N010ATMA1 is a closer-spec alternative offering 120A capability at 40V in a similar Infineon OptiMOS surface-mount package. According to the Infineon automotive MOSFET portfolio, this part shares the 40V V<sub>DS</sub> class but moves to a higher-current package outline; PCB footprint change is required.
What is the difference between IAUZN04S7N049ATMA1 and IAUCN08S7L033ATMA1?
The IAUZN04S7N049ATMA1 is a 40V part, while the IAUCN08S7L033ATMA1 is an 80V part from the same OptiMOS-7 family. Both share the PG-TSDSON-8-44 5x6 mm package footprint and AEC-Q101 automotive qualification. The IAUZN04S7N049ATMA1 offers lower R<sub>DS(on)</sub> (1.2-4.9 mOhm versus higher) at the cost of lower V<sub>DS</sub> headroom. Choose based on your bus voltage, not raw current.

工程参考数据: IAUZN04S7N049ATMA1 ——对比、设计指导和合规信息。

选型指南

Choose IAUZN04S7N049ATMA1 when your design needs the highest continuous current (60A) in the compact PG-TSDSON-8-44 (5x6 mm) package for 12V automotive BLDC drives, DC-DC converters, or eFuse applications where AEC-Q101 qualification is mandatory. Choose IAUCN04S7N037GATMA1 if your load is below 40A continuous and you want the lowest possible R<sub>DS(on)</sub> (~1.2 mOhm). Choose IAUCN04S7L042GATMA1 for moderate-current applications where a slightly higher R<sub>DS(on)</sub> (~4.2 mOhm) is acceptable in exchange for cost savings. All five Infineon parts in this family share the same package, AEC-Q101 qualification, and OptiMOS-7 process, enabling direct PCB footprint reuse with parametric trade-offs based on continuous current and R<sub>DS(on)</sub> budget.

与替代料对比

参数 本产品 IAUCN04S7N037GATMA1 IAUCN04S7L042GATMA1 IAUCN04S7N019GATMA1 IAUCN04S7L050HATMA1 IAUCN04S7N027GATMA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-TSDSON-8-44 (5x6 mm) PG-TSDSON-8-44 (5x6 mm) - same PG-TSDSON-8-44 (5x6 mm) - same PG-TSDSON-8-44 (5x6 mm) - same PG-TSDSON-8-44 (5x6 mm) - same PG-TSDSON-8-44 (5x6 mm) - same
V<sub>DS</sub> (max) 40 V 40 V 40 V 40 V 40 V 40 V
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) 1.2 to 4.9 mOhm 1.2 mOhm 4.2 mOhm 1.9 mOhm 5.0 mOhm 2.7 mOhm
AEC-Q101 Qualified Yes Yes Yes Yes Yes Yes
Technology OptiMOS-7 OptiMOS-7 OptiMOS-7 OptiMOS-7 OptiMOS-7 OptiMOS-7

关键差异点

  • Higher continuous current in same 5x6 mm footprint (对比 IAUCN04S7N037GATMA1)
  • Lower R<sub>DS(on)</sub> for higher-current paths (对比 IAUCN04S7L050HATMA1)
  • OptiMOS-7 generation with optimized gate charge (对比 Older OptiMOS-5 IAUC60N04S6L030HATMA1)

设计说明

The PG-TSDSON-8-44 package relies on the exposed thermal pad for heat dissipation. At 60A continuous drain current with R<sub>DS(on)</sub> of 1.2-4.9 mOhm, conduction loss alone reaches 4.3W to 17.6W. According to the Infineon package thermal model, designers must use a 4-layer PCB with thermal-via arrays under the pad (typically 9-16 vias at 0.3 mm drill, 0.5 mm pitch) to keep junction-to-ambient thermal resistance below 50 C/W. Inadequate thermal vias will push T<sub>j</sub> above 175C under sustained 60A load, triggering thermal shutdown.

Place the gate drive resistor within 5 mm of the gate pin to minimize parasitic inductance in the gate-source loop. Use a 10 Ohm to 47 Ohm gate resistor for the OptiMOS-7 gate, and add a 10 kOhm gate-source pull-down resistor to keep the MOSFET off during MCU power-up. According to the Infineon IAUZN04S7N049 datasheet, the maximum allowable V<sub>GS</sub> is +/-20V; never exceed this with switching transients on the gate-source loop.

Do not use the IAUZN04S7N049ATMA1 in 48V automotive systems - the 40V V<sub>DS</sub> rating is below the 60V load-dump transient. For 48V mild-hybrid applications, select from Infineon's 80V or 100V OptiMOS-7 family (e.g. IAUZ40N10S5N130ATMA1). Also note that the 14A continuous rating at ambient (T<sub>a</sub>=25C) drops to about 8A at T<sub>a</sub>=100C; rely on the T<sub>c</sub> rating for thermal calculations, not T<sub>a</sub>.

合规信息

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
无铅
Yes
无卤
Yes
冲突矿物
Compliant

AEC-Q101 qualified (note: AEC-Q100 in this field refers to the broader automotive IC standard; this part is a discrete MOSFET qualified to AEC-Q101). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free per Infineon environmental data.

数据核验日期: 2026-09-15 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

IAUZN04S7N049ATMA1 IAUZN04S7N049ATMA1 datasheet Infineon IAUZN04S7N049ATMA1 40V 60A automotive MOSFET PG-TSDSON-8 OptiMOS-7 N-channel MOSFET 40V AEC-Q101 40V N-channel MOSFET BLDC drive IAUZN04S7N049ATMA1 vs IAUCN04S7N037GATMA1 IAUZN04S7N049ATMA1 drop-in replacement IAUZN04S7N049ATMA1 buy price Infineon OptiMOS-7 40V 60A automotive PG-TSDSON-8-44 MOSFET pinout automotive BLDC MOSFET 12V 60A

相关元器件 & 术语

Infineon Technologies IAUZN04S7N049ATMA1 IAUZN04S7N049 IAUCN04S7N037GATMA1 IAUCN04S7L042GATMA1 IAUCN04S7N019GATMA1 IAUCN04S7L050HATMA1 IAUCN04S7N027GATMA1 MOSFET N-channel MOSFET power MOSFET OptiMOS-7 AEC-Q101 PG-TSDSON-8-44 R<sub>DS(on)</sub> BLDC motor drive 12V automotive bus DC-DC converter eFuse load switch trench-gate technology Infineon automotive MOSFET portfolio
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